High-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communications

Gökkavas, Mutlu; Dosunmu, O.; Ünlü, M. Selim; Ulu, G.; Mirin, Richard P.; Christensen, David H.; Özbay, Ekmel

doi:10.1109/68.969904

Cited by 16 publications

(5 citation statements)

References 7 publications

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“…Another disadvantage is an increase of the allowed operating temperature because of the shift of the BLIP limit [184]. RCE structures were used to improve performance in almost all IRPD systems such as p-i-n diodes [185], QW [181], T2SL [186], QD [187], quantum dot in quantum well [188], and light emitting diodes [189].…”

Section: Resonant Cavity Structurementioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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Section: Resonant Cavity Structurementioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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“…An absorption region of thickness 1.25µm resulted in a bandwidth BW of 15GHz and a QE of 67 %. In [36], an AlGaAs-GaAs RCE-PIN-PD is presented for detection at 850nm. There, the AlGaAs-GaAs interfaces are graded to eliminate charge trapping that may affect the high-speed performance.…”

Section: Rce-pin-pdmentioning

confidence: 99%

“…With InGaAs, the device spectrum to be extended to wavelengths that GaAs does not absorb. GaAs RCE-PDs have significant applications for wavelengths from 850nm to ~980nm [8], [11], [34]- [36]. InP/InGaAs/InAlAs: The In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As alloy lattice is matched to InP substrate, and this combination is suitable for the incident light of 1.33 to 1.55µm [32], [37]- [39].…”

Section: Algaas/gaas/ingaasmentioning

confidence: 99%

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Resonant cavity enhanced photodetectors (RCE-PDs): structure, material, analysis and optimization

El-Batawy

Deen

2003

SPIE Proceedings

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Resonant cavity enhanced photodetectors (RCE-PDs) are promising candidates for applications in high-speed optical communications and interconnections. In these high-speed photodetectors, both high bandwidth and high external quantum efficiency can be achieved simultaneously because of the multipaths of the incident light due to the presence of the FabryPérot cavity into which the photodetector is inserted. In this paper, state-of-the-art RCE-PDs are discussed. Different structures of the RCE-PDs such as RCE-PIN, RCE-APD, and RCE-MSM PDs are presented and discussed. The material requirements for the RCE PDs with different material system compositions for the different structures and different wavelengths of the incident light that the photodetectors are sensitive to, are discussed. An overview of the analysis and a SPICE model of the RCE-PDs will be presented. These analyses include the calculations of quantum efficiency (QE), impulse response and frequency response of RCE-PDs. These analyses are sensitive to the standing wave effect (SWE) and to carrier diffusion, and both effects are studied. Optimization procedures for the design of ultrafast RCE-PDs will be presented, showing how the QE, bandwidth and speed of these photodetectors can be improved by adjusting the parameters of both the cavity and the photodetector itself. Finally, comparisons to experimental results and a survey of the performance of state-ofthe-art of RCE-PDs will be presented.

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“…RCE Schottky GaAs-based photodetectors have been demonstrated with bandwidths in excess of 50 GHz and peak quantum efficiency of 75%. [8][9][10] Numerous attempts have been made to fabricate Si RCE photodetectors. 11 Earlier devices utilized Si device structures deposited on top of dielectric mirrors.…”

Section: 4mentioning

confidence: 99%

High-speed Si resonant cavity enhanced photodetectors and arrays

Ünlü

Emsley

Dosunmu

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Over the past decade a new family of optoelectronic devices has emerged whose performance is enhanced by placing the active device structure inside a Fabry-Perot resonant microcavity ͓P. E. Green, IEEE Spectrum 13 ͑2002͔͒. The increased optical field allows photodetectors to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. We have demonstrated a variety of resonant cavity enhanced ͑RCE͒ photodetectors in compound semiconductors ͓B. Yang, J. D. Schaub, S. M. Csutak, D. J. Rogers, and J. C. Campbell, IEEE Photonics Technol. Lett. 15, 745 ͑2003͔͒ and Si ͓M. K. Emsley, O. I. Dosunmu, and M. S. Ü nlü, IEEE J. Selected Topics Quantum Electron. 8, 948 ͑2002͔͒, operating at optical communication wavelengths ranging from 850 nm to 1550 nm. The focus of this article is on Si photodetectors and arrays. High bandwidth short distance communications standards are being developed based on parallel optical interconnect fiber arrays to meet the needs of increasing data rates of interchip communication in modern computer architecture. To ensure that this standard becomes an attractive option for computer systems, low cost components must be implemented on both the transmitting and receiving end of the fibers. To meet this low cost requirement silicon based receiver circuits are the most viable option, however, high speed, high efficiency silicon photodetectors present a technical challenge. Commercially reproducible silicon wafers with a high reflectance buried distributed Bragg reflector ͑DBR͒ have been designed and fabricated ͓M. K. Emsley, O. I. Dosunmu, and M. S. Ü nlü, IEEE J. Selected Topics Quantum Electron. 8, 948 ͑2002͔͒. The substrates consist of a two-period, 90% reflecting, DBR fabricated using a double silicon-on-insulator ͑SOI͒ process. Resonant-cavity-enhanced ͑RCE͒ Si photodetectors have been fabricated with 40% quantum efficiency at 850 nm and a FWHM of 29 ps suitable for 10 Gbps data communications. Recently, 1ϫ12 photodetector arrays have been fabricated, packaged, and tested with silicon based amplifiers to demonstrate the feasibility of a low cost solution for optical interconnects.

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High-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communications

Abstract: Abstract-In this letter, we report AlGaAs-GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60-m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm.

Cited by 16 publications

References 7 publications

Emerging technologies for high performance infrared detectors

Emerging technologies for high performance infrared detectors

Resonant cavity enhanced photodetectors (RCE-PDs): structure, material, analysis and optimization

High-speed Si resonant cavity enhanced photodetectors and arrays

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