High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, A.; Blumenthal, Sarah; Keller, Gregor; Prost, W.; Bacher, G.; Tegude, F.‐J.

doi:10.1021/nl504447j

Cited by 105 publications

(77 citation statements)

References 43 publications

(62 reference statements)

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“…E.g., the piezo electric effect forms a 2‐dimensional charge carrier gas at the GaN/AlGaN interface used in heterostructure field‐effect transistors . The polarity may also cause an excessive carrier lifetime in InGaN/GaN quantum wells due to the Quantum Confined Stark Effect degrading the speed performance of III/N LEDs . Hence the full control of the lattice polarity is of very high interest.…”

Section: Introductionmentioning

confidence: 99%

Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111)

Blumberg

Grosse

Weimann

et al. 2018

Physica Status Solidi (b)

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A site‐ and polarity‐controlled MOVPE growth of 3D‐GaN on Si(111) substrates is established using the polarity‐dependent growth speed of GaN on an intermediate AlN layer. For hydrogenated Si or elevated AlN growth temperatures mixed‐polar growth is observed. N‐polarity could be realized on oxidized Si(111) surfaces by a reduced AlN growth temperature of TAlN = 930 °C. Specific Si crystal facets (e.g., {100}, {112¯}) are determined as starting points for metal‐polar growth of AlN. By site‐controlled etching in Si, we intentionally expose these additional crystal facets prior to epitaxy to obtain defined starting points for metal‐polar growth. At TAlN = 930 °C, this leads to a site‐controlled growth of metal‐polar GaN, surrounded by N‐polar AlN on Si(111). Thus both, a polarity‐ and site‐controlled epitaxial growth of 3D‐GaN is achieved. The new developed method has been applied to a large variety of structure sizes from 650 nm to 1 mm. The results are supported by a schematic model, explaining the influence of surface termination, in situ desorption, and growth conditions. This paves the way to the development of future 3D‐opto‐electronic devices, directly established on Si.

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Section: Introductionmentioning

confidence: 99%

Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111)

Blumberg

Grosse

Weimann

et al. 2018

Physica Status Solidi (b)

Self Cite

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“…For the last decade, there have been various methods developed to achieve nanorod LEDs . While merits of the nanostructured devices are demonstrated, these approaches prove to be less applicable to industrial mass production in view of the pricy and complicated lithography/etching (i.e.…”

Section: Introductionmentioning

confidence: 99%

Self‐Assembly Semipolar AlN Nanopyramids Grown on Powder‐Compressed AlN Substrates

Lee

Lin

Huang

et al. 2017

Physica Status Solidi (a)

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AlN nanopyramids with semipolar facets are grown by metal‐organic chemical vapor deposition (MOCVD) on the AlN substrate attained with compressed AlN powders. Surface qualities of the polycrystalline substrate are improved with an AlN buffer layer deposited by sputtering, followed by appropriate post annealing. It is found that a pulsed flow condition of ammonia (NH3) during the MOCVD growth can effectively enhance morphologic uniformity and crystallinity of the nanopyramids. The semipolar AlN nanopyramids serve as a promising template for ultraviolet emitters, considering their increased surface area and reduced polarization fields.

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“…The III–V semiconductor systems offer many advantages such as high electron mobilities, a wide range of direct bandgaps, and the ability to form alloy compounds. Thus, they contribute as active elements in devices, such as laser diodes (LDs) for optical communications, light emitting diodes (LEDs), sensors, and photovoltaics …”

Section: Introductionmentioning

confidence: 99%

3‐D Strain Fields in Low‐Dimensional III–V Semiconductors: A Combined Finite Elements and HRTEM Approach

Florini

Dimitrakopulos

Kioseoglou

et al. 2017

Physica Status Solidi (a)

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A versatile route toward the study of strain fields of low-dimensional III-V semiconductor nanostructures is presented, by combining quantitative highresolution transmission electron microscopy (HRTEM) observations with the finite elements method (FEM). FEM facilitates a fast and straightforward threedimensional (3-D) analysis of elastic properties for various growth orientations and compositional profiles down to the nanoscale. FEM calculations are employed to simulate elastic stress-strain fields of III-V cubic heterostructures comprising InAs surface and buried quantum dots (QDs) grown on GaAs(211)B substrates, and (111)-oriented GaAs/Al x Ga (1Àx) As core-shell nanowires (NWs) on Si. The results are compared with experimental strain maps obtained from HRTEM images by geometric phase analysis (GPA), as well as with molecular dynamics (MD) atomistic simulations. In the former, the compositional grading along the growth axis was considered, and, in the latter, elastic fields were calculated as a function of the shell's chemical composition and shell-to-NW diameter ratios. The agreement between FEM calculations with experimental and theoretical results implies that the plane-stress state can adequately describe the encountered elastic fields. Most importantly, through the determined stress-strain state, strain fields can be translated into 3-D maps of chemical composition in the nanostructures, extracted from 2-D experimental projections.

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High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

Cited by 105 publications

References 43 publications

Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111)

Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111)

Self‐Assembly Semipolar AlN Nanopyramids Grown on Powder‐Compressed AlN Substrates

3‐D Strain Fields in Low‐Dimensional III–V Semiconductors: A Combined Finite Elements and HRTEM Approach

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