High-Speed Fixed Memories Using Large-Scale Integrated Resistor Matrices

Cousinard, David; Feldman, Baruch

doi:10.1109/tc.1968.229155

Cited by 11 publications

(1 citation statement)

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“…R ESISTIVE crossbar arrays were developed before the invention of emerging memory technologies, such as MRAM, RRAM, and phase change memory (PCM) [1], [2]. With the recent development of RRAM devices [3], resistive crossbar arrays, for use in memory, have gained increasing popularity due to the advantages of 4F 2 density and nonvolatility.…”

Section: Introductionmentioning

confidence: 99%

Modeling Size Limitations of Resistive Crossbar Array With Cell Selectors

Ciprut

Friedman

2017

IEEE Trans. VLSI Syst.

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Due to recent developments in emerging memory technologies, resistive crossbar arrays have gained increasing importance. The size of the crossbar arrays is, however, limited due to challenges brought by the interconnect resistance, sneak path currents, and the physical area of the peripheral circuitry. In this paper, three figures of merit that characterize the limitations of resistive crossbar arrays with selectors are described, such as the driver resistance, voltage degradation across the cell, and read margin. The models, exhibiting good agreement with SPICE, are compared with different biasing schemes during both write and read operations. These models are also used to predict the device requirements of resistive crossbar arrays with selectors and to project parameter values, such as the nonlinearity factor, ON-state resistance, and tolerable interconnect resistance per cell for large-scale crossbar arrays.

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Section: Introductionmentioning

confidence: 99%