High-Speed, Energy-Efficient Magnetic Nonvolatile Flip-Flop With Self-Adaptive Write Circuit Utilizing Voltage-Controlled Magnetic Anisotropy

Deng, Xiaoying; Xu, Tao

doi:10.1109/tmag.2021.3064403

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…In this state, the traditional NVFF [14][15][16][17][18] separates the MTJs from the FF circuits via the transmitting transistors. As a result, the NVFFs work like traditional FFs.…”

Section: Normal Modementioning

confidence: 99%

“…Recently, nonvolatile FF (NVFF) has attracted great interest in power-gating applications and a number of NVFF designs have been proposed by integrating nonvolatile memory (NVM) devices [1][2][3][4][5][6][7]. In the NVFFs, data are first stored in the NVMs when the system is in the standby state, and they are then restored back into the regular FFs when the system is powered on [8][9][10][11][12][13][14][15][16]. In this case, run-time data can be maintained even if a power interruption happens.…”

Section: Introductionmentioning

confidence: 99%

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Voltage-Controlled Spin-Orbit-Torque-Based Nonvolatile Flip-Flop Designs for Ultra-Low-Power Applications

Liu,

Deng,

Luo

et al. 2023

Applied Sciences

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Flip-flop (FF) serves as a fundamental unit in various sequential logic circuits and complex digital electronic systems for generating, transforming, and temporarily storing digital signals. Nonvolatility plays a crucial role in FFs by ensuring instant data recovery after unexpected data loss. Nonvolatile flip-flop can quickly recover in a self-powered environment, making it suitable for application environments such as the Internet of Things (IOT). Unfortunately, most existing nonvolatile FFs (NVFFs) suffer from extended delays and high energy consumption during data backup and restore operations. In this paper, we propose two innovative voltage-controlled nonvolatile FFs (VC-FFs), namely VC-DFF (voltage-controlled D-FF) and VC-SRFF (voltage-controlled SR-FF), which address these challenges using voltage-controlled spin-orbit torque (VC-SOT) devices. The proposed designs are evaluated using a 40 nm CMOS process. Simulation results demonstrate that the proposed designs achieve significant improvements in write (recovery) energy consumption, with over 7.2× (1.54×) and 18.7× (2×) enhancements compared to their STT- and SOT-based counterparts, respectively.

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“…In this state, the traditional NVFF [14][15][16][17][18] separates the MTJs from the FF circuits via the transmitting transistors. As a result, the NVFFs work like traditional FFs.…”

Section: Normal Modementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Voltage-Controlled Spin-Orbit-Torque-Based Nonvolatile Flip-Flop Designs for Ultra-Low-Power Applications

Liu,

Deng,

Luo

et al. 2023

Applied Sciences

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Odd Counter: New Design and Performance Analysis using Carbon Nano Tube Transistors for High Performance Applications

Khan

Shah

Rai³

et al. 2023

2023 International Conference on Computational Intelligence and Sustainable Engineering Solutions (CISES)

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Performance Analysis of Voltage-Controlled Magnetic Anisotropy MRAM-Based Logic Gates and Full Adder

Jangra¹,

Duhan²

2023

ECS J. Solid State Sci. Technol.

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In the last decade, spintronics technology has been extensively researched for future non-volatile memories use. VCMA-MRAM, exploits the voltage controlled magnetic anisotropy (VCMA) principle to write data into magnetic tunnel junctions. This paper has implemented AND/NAND, OR/NOR, XOR/XNOR, and Full Adder using CMOS/VCMA models. Three models of VCMA have been used in this paper for performance analysis and comparison – STT-assisted thermally activated VCMA, STT-assisted precessional VCMA, and Precessional VCMA. The performance of these circuits has been analyzed, and the results have been compared within VCMA modules. Performance parameter like energy consumption and delay has been analyzed in this paper. From the gate latency (delay) and energy consumption analysis, it has been derived that the precessional VCMA-based gates perform better in these domain as compared to the other VCMA model based gates. It is observed that performance improvements of ~20% and ~60% have been seen over STT-assisted precessional VCMA and STT-assisted thermally activated VCMA and based gates in terms of gate latency at 1.2 V operating voltage and improvement of around 80 % is seen in terms of energy over STT-assisted precessional VCMA, respectivel

show abstract

High-Speed, Energy-Efficient Magnetic Nonvolatile Flip-Flop With Self-Adaptive Write Circuit Utilizing Voltage-Controlled Magnetic Anisotropy

Cited by 3 publications

References 19 publications

Voltage-Controlled Spin-Orbit-Torque-Based Nonvolatile Flip-Flop Designs for Ultra-Low-Power Applications

Voltage-Controlled Spin-Orbit-Torque-Based Nonvolatile Flip-Flop Designs for Ultra-Low-Power Applications

Odd Counter: New Design and Performance Analysis using Carbon Nano Tube Transistors for High Performance Applications

Performance Analysis of Voltage-Controlled Magnetic Anisotropy MRAM-Based Logic Gates and Full Adder

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