High-speed determination of the thickness and spectral ellipsometry investigation of films produced by the thermal oxidation of InP and V x O y /InP structures

Mittova, I. Ya.; Швец, В. А.; Томина, Е. В.; Сладкопевцев, Б. В.; Tret’yakov, N. N.; Lapenko, A. A.

doi:10.1134/s0020168513020143

Cited by 11 publications

(10 citation statements)

References 4 publications

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“…2 and 3 was present both in the form of In 2 O 3 and in the form of unoxidized In. Thus, correlation with spectral ellipsometry data [18] was detected, indicating absorption near 500 nm, caused by the presence of unoxidized indium in films. For nano-island heterostructures, at short oxidation times, the presence of peaks corresponding to the semiconductor substrate was noted and it was associated with the specificity of these samples themselves -an incomplete initial coating by the surface chemostimulator.…”

Section: −supporting

confidence: 58%

The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

Sladkopevtcev¹,

Золотухина²,

Томина³

et al. 2017

Nanosystems: Phys. Chem. Math.

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The dependence of oxide films surface layers' compositions on the method of depositing of V 2 O 5 on InP and regimes of thermal oxidation of the formed heterostructures was established by the XPS method. Lower indium content near the surface for all samples in comparison with the standard indicates a partial blocking of its diffusion into films during the chemostimulated thermal oxidation of the semiconductor. The presence of vanadium oxides in certain oxidation states and their ratio depends on the method of deposition for the chemostimulator, and on the regime of thermal oxidation. In the case of the electric arc synthesis method, at shorter reaction times, vanadium compounds in the +4 and +5 oxidation states were present in the near-surface layer, which gives evidence for the catalytic mechanism.

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Section: −supporting

confidence: 58%

The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

Sladkopevtcev¹,

Золотухина²,

Томина³

et al. 2017

Nanosystems: Phys. Chem. Math.

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“…As shown earlier, the refractive index of the native oxide grown on InP at 500°C over a period of 2 h markedly exceeds that pre sented in Ref. [7] (n = 1.7-2.1 and n ≈ 1.52, respec tively) [8]. The absorption index k of the oxide reaches 0.3, which is due to the indium diffusion into the film during direct thermal oxidation of the semiconductor [9].…”

Section: Resultsmentioning

confidence: 70%

Determination of the thickness and optical constants of nanofilms produced by the thermal oxidation of InP with V2O5, V2O5 + PbO, and NiO + PbO chemical stimulator layers grown by magnetron sputtering

et al. 2013

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The thickness and optical constants of films grown through the thermal oxidation of V 2 O 5 /InP, (NiO + PbO)/InP, and (V 2 O 5 + PbO)/InP structures produced by magnetron sputtering have been deter mined by spectral ellipsometry. The results demonstrate that the structures have sharp interfaces and their optical constants in the long wavelength part of the spectrum are well described by the Cauchy model with a normal dispersion law, which allows one to determine the thickness of such nanofilms with high accuracy using high speed ellipsometric characterization with a single wavelength laser ellipsometer.

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“…1), indi cating that the Cauchy model ensures an adequate description of the optical constants of the oxide films [7]. According to this model, the films produced by oxidizing V x O y /GaAs heterostructures are transparent at long wavelengths.…”

Section: Resultsmentioning

confidence: 99%

Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films

et al. 2015

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INTRODUCTIONTransition metal oxide nanolayers on the surface of gallium arsenide are effective chemical stimulators of the oxidation of this semiconductor [1]. Depending on the deposition method (mild or harsh), V 2 O 5 on InP leads to different mechanisms of the thermal oxi dation of the semiconductor and, eventually, to differ ent properties of the resulting nanofilms [2,3]. Vana dium pentoxide deposited on the surface of GaAs by magnetron sputtering ensures oxidation by a catalytic mechanism [4]. The use of V 2 O 5 gel enables mild sur face modification of the semiconductor at relatively low temperatures and low energies. Before the thermal oxidation of a heterostructure, interaction between a chemical stimulator layer and components of the sub strate is negligible.The objectives of this work are to assess the kinetics and mechanism of the thermal oxidation of V x O y /GaAs heterostructures produced under mild conditions and determine the composition and sur face morphology of the resulting oxide films. EXPERIMENTAL Vanadium(V) oxide gel synthesized as described by Sladkopevtsev et al. [2] was dispersed using a compres sor disperser, which ensured the preparation of aerosol with a solution droplet size of up to 4-5 μm. The aero sol was deposited on Peltier cooled (111) AGChO n type GaAs semiconductor wafers with a 300 K majority carrier concentration of 5 × 10 16 cm -3 , which were pretreated with a 5 : 1 : 1 mixture of H 2 SO 4 (reagent grade, RF State Standard GOST 4204 77, 92.80%), Н 2 О 2 (extrapure grade, Purity Standard TU 6 02 570 750, 56%), and Н 2 О for 10 min and then rinsed repeatedly in double distilled water. The depo sition time was 3 min. The samples were dried in air. To crystallize amorphous films and remove water, the samples were annealed in air at 300°С for 120 min in an MTP 2M 50 500 resistively heated furnace. The temperature was controlled with an accuracy of ±1°С (OVEN TRM 10).The V x O y /GaAs heterostructures thus produced were oxidized in oxygen (30 L/h) at temperatures of 500, 530, 550, and 570°C for 60 min. The increase in the thickness of the films was determined every 10 min by laser ellipsometry (LEF 754, λ = 632.8 nm, abso lute uncertainty of ±1 nm). The thickness of the vana dium oxide layers was determined in the same way. To verify the laser ellipsometry data [5], the ellipsometric parameters of the films were measured as functions of wavelength on an Ellips 1891 spectral ellipsometer, and the inverse problem was solved using the Cauchy dispersion model [6]. The surface morphology of the Abstract-Vanadium(V) oxide, V 2 O 5 , produces a well defined chemical stimulation effect and can exhibit both oxygen transfer and catalytic behavior in the thermal oxidation of III-V semiconductors. Applying V 2 O 5 gel to the surface of GaAs is a mild surface modification method in which there is no interaction between the chemical stimulator layer and semiconductor substrate before thermal oxidation. Here, we describe the kinetics and mechanism of the thermal oxidation of V x O y /GaAs h...

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High-speed determination of the thickness and spectral ellipsometry investigation of films produced by the thermal oxidation of InP and V x O y /InP structures

Cited by 11 publications

References 4 publications

The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

Determination of the thickness and optical constants of nanofilms produced by the thermal oxidation of InP with V2O5, V2O5 + PbO, and NiO + PbO chemical stimulator layers grown by magnetron sputtering

Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films

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