High-Speed Avalanche Photodiodes With Wide Dynamic Range Performance

Zhao, Hao-Yi; Naseem, N.; Jones, Andrew; Chao, Rui-Lin; Ahmad, Zohauddin; Campbell, Joe C.; Shi, Jin‐Wei

doi:10.1109/jlt.2019.2944098

Cited by 24 publications

(15 citation statements)

References 30 publications

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“…The thickness of each epi-layer is stated clearly in the figure. In order to facilitate a stepped electric field profile, the 500 nm thick multiplication (M-) layer is subdivided into two parts of 200 nm and 300 nm using additional charge control layer, as shown [10,11]. The electric field distribution within the device is simulated by using the Silvaco Technology Computer Aided Design (TCAD) tools 1 .…”

Section: Introductionmentioning

confidence: 99%

“…Compared to device B with triple mesas, device A with the quadruple mesa structure provides better E-field confinement at the edge of the M-layer of the bottommost mesa. This is because the additional second mesa in device A, which is etched through the first field control (charge) layer and stops at first M-layer, can more effectively constrain the E-field below it [10,11]. Figures 2 (b) and (c) show the calculated electric fields of devices A and B along the horizontal directions at the first (BB') and second (CC') M-layers under a breakdown voltage of (-51 V).…”

Section: Introductionmentioning

confidence: 99%

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High-Power and High-Responsivity Avalanche Photodiodes for Self-Heterodyne FMCW Lidar System Applications

et al. 2021

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In this work, we demonstrate the high-power and high-responsivity performance of the dual multiplication (M-) layers in In0.52 Al0.48 As based avalanche photodiode (APD). The dual M-layer design in our APD structure effectively constrains the multiplication process to a thin high-field region rather than the whole thick M-layer. It thus minimizes the space charge effect (SCE) within and avoids increasing the tunneling dark current for the case of directly shrinking M-layer thickness in APD. Furthermore, by combining the specially designed mesa shape with this dual M-layer structure, the edge breakdown can be well suppressed. These benefits lead to an ultra-high gain-bandwidth product (450 GHz; 1 A/W at unit gain) and a high saturation current (>12 mA) can be simultaneously achieved in our device. By nonlinearly driving a wavelength sweeping laser in the self-heterodyne lidar setup, it can generate an optical pulse train-like waveform, providing an effective optical modulation depth of 200% to feed into our demonstrated APD at the receiver-end. Under such scheme, the photo-generated RF (1 GHz) power from our APD with a 6.3 A/W responsivity can be as high as +6.95 dBm at a high (7 mA) output photocurrent. Such high-power and highresponsivity characteristics of our APD can further improve the signal-to-noise (S/N) ratio and dynamic range performances in each pixel of the lidar image. A high-quality 3-dimensional (D) FMCW lidar image is constructed based on our APD, without the integration of any electrical amplifier at the receiver end.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Power and High-Responsivity Avalanche Photodiodes for Self-Heterodyne FMCW Lidar System Applications

et al. 2021

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Section: Inverted P-down Designmentioning

confidence: 99%

“…They used an etched mesa-form p-type contact layer rather than a p-type selective doping region, eliminating uncertainty in the active region caused by selective diffusion or the ion-implantation process. This concept has been extended to other mesa-type APDs [15,16]. When we want to combine a hybrid absorber to boost the operating speed and sensitivity with the vertical illumination structure, however, we have to carefully consider the design.…”

Section: Inverted P-down Designmentioning

confidence: 99%

Inverted p-down Design for High-Speed Photodetectors

et al. 2021

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We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

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“…Regarding data transmission speed, it is relatively easy at present to achieve around 40 Gb/s (limited by the speed of electronics) with standard off-the-shelf telecom components for fiber optics communications at 1550 nm in a free-space optical link based on beam on/off sequential data transmission (on-off keying). Contrary to the case of the eavesdropping system, rather than an APD, a p-i-n photodiode that requires no quenching can be used in the receiver due to the higher light level received, although APD bandwidths of 16 GHz have been recently reported [27].…”

Section: Introductionmentioning

confidence: 99%

Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Torregrosa

Karamehmedović

Maestre

et al. 2020

Sensors

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Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

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High-Speed Avalanche Photodiodes With Wide Dynamic Range Performance

Cited by 24 publications

References 30 publications

High-Power and High-Responsivity Avalanche Photodiodes for Self-Heterodyne FMCW Lidar System Applications

High-Power and High-Responsivity Avalanche Photodiodes for Self-Heterodyne FMCW Lidar System Applications

Inverted p-down Design for High-Speed Photodetectors

Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

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