High-Speed and Responsivity 4H-SiC 8 × 8 p-i-n Ultraviolet Photodiode Arrays With Micro-Hole Structure

Fu, Zhao; Zhang, Mingkun; Han, Shan; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Y. J.; Fu, Deyi; Zhang, Wu; Zhang, Baoping; Feng, Zhaochi; Zhang, Rong

doi:10.1109/ted.2023.3286379

Cited by 5 publications

(2 citation statements)

References 21 publications

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“…However, as shown in Figure 3b, the device with 6 µm interdigital interval and asymmetrical graphene electrodes has a higher electric field up to 3 MV cm −1 , which is near to the critical breakdown electric field of 4H‐SiC. The carriers generated around the electrodes obtain sufficient kinetic energy to collide with the crystal lattice of SiC and induce local avalanche effect, [ 55 ] then be collected by the electrodes. As shown in Figure 2b, the peak value of η is 92% (nearly to 100%) when the bias is 15 V, which means that the threshold voltage of the avalanche is ≈15 V as shown in Figure S2 (Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

Zhang,

Sun,

Zhu

et al. 2024

Advanced Optical Materials

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High‐quality epitaxial graphene is prepared on semi‐insulated 4H‐SiC (0001) by ultra‐high vacuum thermal decomposition method and used in graphene/SiC/graphene ultraviolet‐visible dual‐band photodetectors. The dual‐band detector exhibits an extremely low dark current (5.2 × 10−14 A) and a peak responsivity of 1.17 A W−1 corresponding to an external quantum efficiency of 518%. A high detectivity of 3.14 × 1014 Jones is achieved under 280 nm light illumination at 30 V, while a high response speed is obtained with a rise time of 25.17 ns and a decay time of 540.10 ns. The detector shows a responsivity of 1.4 × 10−5 A W−1 and a detectivity of 6.5 × 109 Jones under 430 nm light illumination. The dual‐band detector equipped with SiC grating and asymmetrical graphene electrodes is demonstrated for high‐performance optoelectronic logic “AND” gate with high detectivity at 280 and 430 nm.

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Section: Resultsmentioning

confidence: 99%

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

Zhang,

Sun,

Zhu

et al. 2024

Advanced Optical Materials

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“…4H-SiC is an ideal material for constructing heterojunction broadband detectors [29] due to its excellent chemical-mechanical stability, good heat dissipation, and relatively mature processing technology [30,31]. As a wide bandgap semiconductor materials (3.26 eV), 4H-SiC has a high response in the UV spectral region [32,33] and is insensitive in VIS and IR spectral regions. In addition, Si (1.1 eV) shows excellent optical sensitivity in VIS and NIR spectral regions [34,35].…”

Section: Introductionmentioning

confidence: 99%

Poly-Si/a-Si/4H-SiC p-n heterojunction broadband photodetector prepared by magnetron sputtering

Li,

Zhang,

et al. 2024

J. Phys. D: Appl. Phys.

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With the increasing complexity of scenarios, there is a growing need for broadband photodetectors. In this work, we report a polycrystalline-Si (poly-Si)/amorphous-Si (a-Si)/4H-SiC p-n heterojunction photodetector with efficient response in a broad spectral range of ultraviolet-visible-near-infrared (UV-VIS-NIR). The poly-Si/a-Si/4H-SiC heterojunction was achieved by magnetron sputtering and annealing. The fabricated heterojunction device has a low dark current of 1 pA at -40 V and a fast response time of 3 ns due to the outstanding rectification characteristics of the heterojunction combined with narrow bandgap and wide bandgap material. In addition, the carrier behaviour of the heterojunction exposed to boardband light is analyzed in detail by constructing the energy band diagram.

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High-Performance Al₀.₁Ga₀.₉N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations

You,

Wang,

Luo

et al. 2024

IEEE Electron Device Lett.

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High-Speed and Responsivity 4H-SiC 8 × 8 p-i-n Ultraviolet Photodiode Arrays With Micro-Hole Structure

Cited by 5 publications

References 21 publications

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

Poly-Si/a-Si/4H-SiC p-n heterojunction broadband photodetector prepared by magnetron sputtering

High-Performance Al₀.₁Ga₀.₉N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations

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