High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers

Nakata, T.; Takeuchi, Tetsuya; Makita, Kikuo; Torikai, T.

doi:10.1109/leos.2001.969042

Cited by 8 publications

(2 citation statements)

References 6 publications

(2 reference statements)

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“…In 1994, a first waveguide superlattice APD was reported by the Shishikura group [31] . Then, an APD with a thinner photoabsorption layer was fabricated, which reached a 3.2 multiplication factor and 0.9 A/W responsivity at 20 GHz [32] in 1997. Using a similar approach, a broader bandwidth of 35 GHz was realized for APD by Nakata et al in 2001, its gain-bandwidth product was 140 GHz [33] .…”

Section: Introductionmentioning

confidence: 99%

High-speed photodetectors in optical communication system

Zhao

Liu

et al. 2017

J. Semicond.

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This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.

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Section: Introductionmentioning

confidence: 99%

High-speed photodetectors in optical communication system

Zhao

Liu

et al. 2017

J. Semicond.

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“…According to our simulation results, this novel structure can exhibit 30-Gb/s electrical bandwidth and 10 avalanche gain simultaneously under low operation voltage ( 12 V) even with a long absorption length (150 m). The proposed device structure and the implication of the simulation results in this paper can not only be applied to the example Si-SiGe-based APD, but also serve as general guidelines for designing III-V-based TWAPDs or waveguide APDs (WGAPDs) [29]- [31] with long device length, high-speed and high-saturation output power, and low operation voltage.…”

mentioning

confidence: 99%

Design and Analysis of Separate-Absorption-Transport-Charge-Multiplication Traveling-Wave Avalanche Photodetectors

Shi

Liu

2004

J. Lightwave Technol.

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This paper proposes a novel type of avalanche photodiode-the separate-absorption-transport-charge-multiplication (SATCM) avalanche photodiode (APD). The novel design of photoabsorption and multiplication layers of APDs can avoid the photoabsorption layer breakdown and hole-transport problems, exhibit low operation voltage, and achieve ultra-high-gain bandwidth product performances. To achieve low excess noise and ultra-high-speed performance in the fiber communication regime (1.3 1.55 m), the simulated APD is Si-based with an SiGe-Si superlattice (SL) as the photoabsorption layer and traveling-wave geometric structures. The frequency response is simulated by means of a photo-distributed current model, which includes all the bandwidth-limiting factors, such as the dispersion of microwave propagation loss, velocity mismatch, boundary reflection, and multiplication/transport of photogenerated carriers. By properly choosing the thicknesses of the transport and multiplication layers, microwave propagation effects in the traveling-wave structure can be minimized without increasing the operation voltage significantly. A near 30-Gb/s electrical bandwidth and 10 avalanche gain can be achieved simultaneously, even with a long device absorption length (150 m) and low operation voltage ( 12 V). In addition, the ultrahigh output saturation power bandwidth product of this simulated TWAPD structure can also be expected due to the large photoabsorption volume and superior microwave-guiding structure. Index Terms-Avalanche photodetector, avalanche photodiode (APD), high gain-bandwidth-product avalanche photodetector, high-saturation-power photodetector, Si-SiGe-based photodetector, Si-SiGe-based superlattice (SL), traveling-wave photodetector, ultra-high-speed photodetector. I. INTRODUCTIONT HE rapid growth in Internet traffic has created an urgent need to increase the channel bandwidth capacity of fiber-optic communication systems. As a key component in these transmission systems, ultra-high-speed photodetectors are able to not only increase the transmission capability in a single channel, but also reduce the required number of channels and complexity of management in a wavelength-division-multiplexing (WDM) fiber communication system [1]. There

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Traveling-Wave Photodetectors With High Power–Bandwidth and Gain–Bandwidth Product Performance

Lasaosa

Shi

Pasquariello

et al. 2004

IEEE J. Select. Topics Quantum Electron.

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Abstract-Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum unsaturated output power. We review recent advances in TWPDs. Record high-peak output voltage together with ultrahigh-speed performance has been observed in low-temperature-grown GaAs (LTG-GaAs)-based metal-semiconductor-metal TWPDs at the wavelengths of 800 and 1300 nm. An approach to simultaneously obtain high bandwidth and high external efficiency is a traveling-wave amplifier-photodetector (TAP detector) that combines gain and absorption in either a sequential or simultaneous traveling-wave structure.

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High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers

Cited by 8 publications

References 6 publications

High-speed photodetectors in optical communication system

High-speed photodetectors in optical communication system

Design and Analysis of Separate-Absorption-Transport-Charge-Multiplication Traveling-Wave Avalanche Photodetectors

Traveling-Wave Photodetectors With High Power–Bandwidth and Gain–Bandwidth Product Performance

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