High-Speed and High-Output InP–InGaAs Unitraveling-Carrier Photodiodes

Itô, Hiroshi; Kodama, Satoshi; Muramoto, Y.; Furuta, Tadaomi; Nagatsuma, Tadao; Ishibashi, Tadao

doi:10.1109/jstqe.2004.833883

Cited by 390 publications

(196 citation statements)

References 83 publications

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“…Based on equation (1), the higher electron drift velocity in the NBUTC photodiode suggests that these devices could offer superior SCBP performance compared with UTC photodiodes. The reported SCBP for a single UTC photodiode is usually around the 2,500 mA GHz level [28,70,71]. With this NBUTC device we have demonstrated an SCBP of over 4,070 mA GHz [58], and a NBUTC photodiode with a linear cascade structure has been reported to have an SCBP of as high as 7,500 mA GHz, the highest achieved so far [56,57].…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 77%

“…It can thus be understood that electrons are the only active carriers in the UTC photodiode structure. This leads to a significant improvement in the effective carrier drift velocity of the photodiode during operation and excellent SCBP performance [28,70,71]. The major difference between the UTC photodiode and the NBUTC photodiode is the insertion of an additional p-type charge layer in the collector layer to control the distribution of the internal electrical field, which results in an over-shoot of the electron drift velocity even under high reverse bias voltage (-3 V) [56][57][58][71][72][73][74].…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

“…With this NBUTC device we have demonstrated an SCBP of over 4,070 mA GHz [58], and a NBUTC photodiode with a linear cascade structure has been reported to have an SCBP of as high as 7,500 mA GHz, the highest achieved so far [56,57]. The excellent performance of UTC and the NBUTC photodiodes in terms of speed and saturation power means that high-performance photonic transmitters with an end-fire or broadside radiation pattern [24,25,30,75,76] and operating frequency of 0.1-1 THz can be realized, along with a much higher output power (>20 dB) compared with p-i-n [77] and LTG-GaAs-based photonic transmitters [70]. Figure 7 shows a UTC photodiode-based photonic transmitter with a broadside (patch) antenna [76] and end-fire (tapered slot) antenna [30] for the excitation of WR-10 and WR-8 rectangular waveguide-based horn antennas.…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

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Millimeter-wave photonic wireless links for very high data rate communication

2011

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T he most useful wireless communication band is located in the frequency range of 0.3-3.5 GHz for reasons of compact antenna size, low propagation loss and good penetration through buildings [1]. However, wireless carrier frequencies are being pushed higher due to emerging high-bandwidth applications, which include next-generation smart cell phones [1] and wireless linking for three-dimensional super high-definition television [2]. As a result, the millimeter-wave (MMW) bands at 60 (V-band), 120 (D-band) and even higher than 300 GHz are beginning to attract attention due to their 'unlicensed' usage [2][3][4][5][6][7][8].Several key front-end components have been developed employing the already mature silicon-based complementary metal-oxide-semiconductor (CMOS) integrated-circuit (IC) technology for wireless communication in the V (50-75 GHz) and W (75-110 GHz) bands or even higher operating frequencies for wireless communication [9]. Recently, a 60 GHz CMOS transceiver module [10] and system comprised of antennas, 60 GHz power amplifiers, local oscillators and baseband ICs has been commercially developed by SiBEAM (USA). In addition, advanced InP-based high electron mobility transistors (InP-HEMTs) and heterojunction bipolar transistors have been used to develop some high-speed ICs and key components that operate at 125 GHz [11,12] or greater than 300 GHz [13,14] for >1 Gbit s -1 wireless communication systems.However, MMW signals suffer substantial propagation loss in free space [8]. This problem and their inherent straight-line path of propagation affect connections and synchronization between the different parts of the whole communication system [15]. A promising solution to overcome this problem is the radio-over-fiber (RoF) technique [3,4,16,17], in which the MMW local-oscillator signal and data are both distributed through a low-loss optical fiber and only radiated over the last mile to the end user. Figure 1 shows a schematic representation of this approach, illustrating the motivation and working principles of two MMW-over-fiber communication systems. Figure 1(a) shows the additional electrical-to-optical (E-O) and optical-to-electrical (O-E) conversion processes used in the central office and base station, respectively. The optical MMW signal is distributed remotely through a low-loss fiber from the central office to several base stations, effectively eliminating the huge propagation loss of the MMW signal that occurs in an electrical transmission line or free space.

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Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 77%

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

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Millimeter-wave photonic wireless links for very high data rate communication

2011

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“…We are investigating a development of the uni-travelling carrier (UTC) photodetector [6] using travelling wave techniques [7]. The UTC structure gives high electron drift velocity and reduces the carrier space-charge effect, giving higher saturation powers.…”

Section: Millimetre-wave and Thz Emittersmentioning

confidence: 99%

Photonic-Enabled Microwave and Terahertz Communication Systems

Seeds

Fice

Pozzi

et al. 2009

Optical Fiber Communication Conference and National Fiber Optic Engineers Conference

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An optical heterodyne technique for generating millimetre-wave and THz carriers with high spectral purity and low phase noise is described, for application to Gb/s wireless communications systems. Progress on key integrated optical components is reported. IntroductionMicrowave photonics research [1] has found applications in areas as diverse as electronic warfare and medical imaging, and the development of wireless-over-fibre systems for distribution of cellular radio and other wireless signals within large buildings and other areas where coverage from conventional hill-top sites is poor, has proved to be of considerable commercial importance, with sales of systems reaching some $250 m annually. Now, with wireless local area networks (LANs) ubiquitous and demand for higher wireless transmission rates using IEEE 802.16 and similar standards growing, new potential applications for photonics in wireless communications are emerging, to generate, modulate and detect signals at higher carrier frequencies (>60 GHz) that can support Gb/s data rates [2]. Extending this idea to terahertz frequencies may allow even higher rate, short-range wireless communications for applications such as fibre-break bridging, with the additional advantage of increased security due to the stronger atmospheric absorption at these frequencies. In this paper, we describe work towards developing key photonic components for generating millimetre wave and terahertz frequency signals and communication systems being built with them.

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“…In Uni-Travelling Carrier structures (UTC) the electrons act as the only active carriers and determine the photoresponse. These UTC structures (UTC) allowed a 3dB bandwidth of 310 GHz with 0.07 A/W responsivity [3]. Another advantage of the UTC structure is that the space charge effect is significantly reduced, since the carriers in the intrinsic region are moving electrons only.…”

Section: Introductionmentioning

confidence: 99%