High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators

Först, Michael; Niehusmann, J.; Plötzing, Tobias; Bolten, Jens; Wahlbrink, T.; Moormann, Christian; Kurz, H.

doi:10.1364/ol.32.002046

Cited by 79 publications

(42 citation statements)

References 12 publications

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“…The resonance frequency of the resonator at site n = 0 is assumed to be biased and periodically modulated in time. This can be accomplished by modulation of the microcavity refractive index using various physical mechanisms such as free-carrier-plasma dispersion and electro-optic effects [39][40][41][42]. In CROW systems, light transport can be described by coupled-mode theory [18,25,27,28], which reproduces with excellent accuracy the results obtained by FDTD numerical simulations [21,25,27].…”

Section: Photonic Structure and Floquet Analysismentioning

confidence: 74%

Tunable dynamic Fano resonances in coupled-resonator optical waveguides

Longhi

2015

Phys. Rev. A

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A route toward lineshape engineering of Fano resonances in photonic structures is theoretically proposed, which uses dynamic modulation of the refractive index of a microcavity. The method is exemplified by considering coupled-resonator optical waveguide systems. An exact Floquet analysis, based on coupled-mode theory, is presented. Two distinct kinds of resonances can be dynamically created, depending on whether the static structure sustains a localized mode or not. In the former case a single Fano resonance arises, which can be tuned in both frequency and line width by varying the refractive index modulation amplitude and frequency. In the latter case two resonances, in the form of narrow asymmetric dips in the transmittance, are found, which can overlap resulting in an electromagnetically-induced transparency effect.

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Section: Photonic Structure and Floquet Analysismentioning

confidence: 74%

Tunable dynamic Fano resonances in coupled-resonator optical waveguides

Longhi

2015

Phys. Rev. A

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“…With the 3 dB line width (δf) of the microring resonator determined by solving eq 4, the corresponding analytic solution for the quality factor (Q) of the microring resonator is derived as (5) Particularly, the optical intensity can be enhanced when the propagation wavelength is exactly located at the resonant wavelength of the microring resonator. The traveling wave in the microring waveguide interferes constructively with the input optical field, and the optical intensity magnification is built up in the microring resonator when the optical field travels with a phase-shift of an integral multiple of 2π in one round trip.…”

Section: ■ Methodsmentioning

confidence: 99%

Enhancing Optical Nonlinearity in a Nonstoichiometric SiN Waveguide for Cross-Wavelength All-Optical Data Processing

Lin

et al. 2015

ACS Photonics

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Nonstoichiometric SiN x with enhancing optical nonlinearity is enabled to facilitate the waveguide microring resonator for cross-wavelength all-optical data processing applications. The Si/N composition ratio of the nonstoichiometric SiN x can be detuned from stoichiometric to Si-rich by adjusting the SiH 4 /NH 3 fluence ratios. Under pumping with incoming pulsed data, the comb-like transmittance of the nonstoichiometric SiN x microring resonator can spectrally red-shift by 100 pm as its effective refractive index changed by more than 1 order of magnitude due to the enhanced nonlinear Kerr effect. The enlarged refractive index of Δn = 1.6 × 10 −4 with increasing nonlinear refractive index to n 2 = 1.6 × 10 −13 cm 2 /W at 1550 nm is observed at a Si concentration of 66.2% in the Si-rich SiN x film. In application, a cross-wavelength all-optical data conversion/inversion processor based on the nonstoichiometric SiN x microring resonator is presented. The dense nanoscale Si content formed by a higher Si/N composition ratio of the SiN x contributes to an enhanced Kerr effect based optical nonlinear switching, which enables the optimized 12 Gbit/s all-optical conversion of the pulsed return-to-zero on−off-keying (RZ-OOK) data with converted or inverted format. The photon lifetime of ∼19 ps in the Si-rich SiN x microring resonator cavity can support the Si-rich SiN x alloptical Kerr switch with a maximal bandwidth of up to 50 GHz. S ilicon photonics has been considered to realize the optical interconnect circuits for decades, and the pure Si-based waveguide devices have played important roles in acting as different functionalities in this field. With the free-carrierinduced plasma dispersion effect, 1,2 a pure Si-based electrooptical modulator and all-optical modulators were demonstrated. 3−7 The all-optical modulation bandwidth extended from hundreds of MHz to several GHz but was limited by the carrier diffusion dominated lifetime of the bulk Si. 8,9 Recently, the free-carrier absorption (FCA) cross-section in the silicon quantum dots (Si-QDs) has been proved to be 1 order of magnitude larger than that in the bulk Si. 10−12 Even though shrinking the Si-QD size can further shorten the carrier relaxation lifetime due to the quantum confinement effect, 13,14 the effective free-carrier lifetime in Si-QDs is still much longer than that of the bulk Si so as to limit the modulation bandwidth of the Si-QD-based FCA modulator at around 1 MHz. 15−17 To develop an ultrafast all-optical modulator that is fully compatible with Si-based CMOS integrated circuits, the most appropriate solution among versatile approaches is to use the enhanced optical nonlinearity of the Si-QDs. Recently, the optical nonlinearity of the Si-QDs doped in SiO x has been analyzed by using the femtosecond Z-scan method. 18−21 The nonlinear Kerr coefficient of the Si-QDs is experimentally proved to be 2 orders of magnitude higher than that of the bulk Si due to the strong quantum confinement effect. 18−22 The excitons generated in the highly confined Si-QDs...

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“…Applications would include optical buffering [7], all-optical wavelength conversion [8], and all-optical computation [9], [10]. Almeida et al and Foerst et al have recently demonstrated an all-optical modulator with single-photon absorption (SPA) based carrier injection using visible light [11], [12]. This approach has severe limitations; because of the disparate wavelengths for gate and signal, these devices cannot be cascaded into circuits that require feedback.…”

mentioning

confidence: 99%

All-Optical Modulation in a Silicon Waveguide Based on a Single-Photon Process

Baehr‐Jones

Hochberg

Scherer

2008

IEEE J. Select. Topics Quantum Electron.

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Abstract-All-optical, low-power modulation is a major goal in photonics. Because of their high mode-field concentration and ease of manufacturing, nanoscale silicon waveguides offer an intriguing platform for photonics. So far, all-optical modulators built with silicon photonic circuits have relied on either two-photon absorption or the Kerr effect. Both effects are weak in silicon, and require extremely high (∼5 W) peak optical power levels to achieve modulation. Here, we describe an all-optical Mach-Zehnder modulator based on a single-photon absorption (SPA) process, fabricated entirely in silicon. Our SPA modulator is based on a process by which a single photon at 1.55 µm is absorbed and an apparently free-carrier-mediated process causes an index shift in silicon, even though the photon energy does not exceed that of silicon's bandgap. We demonstrate all-optical modulation with a gate response of 1• /mW at 0.5 Gb/s. This is over an order of magnitude more responsive than typical previously demonstrated devices. Even without resonant enhancement, further engineering may enable all optical modulation with less than 10 mW of gate power required for complete extinction, and speeds of 5 Gb/s or higher.

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High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators

Cited by 79 publications

References 12 publications

Tunable dynamic Fano resonances in coupled-resonator optical waveguides

Tunable dynamic Fano resonances in coupled-resonator optical waveguides

Enhancing Optical Nonlinearity in a Nonstoichiometric SiN Waveguide for Cross-Wavelength All-Optical Data Processing

All-Optical Modulation in a Silicon Waveguide Based on a Single-Photon Process

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