High speed 8T SRAM cell design with improved read stability at 180nm technology

Raikwal, Pushpa; Neema, Vaibhav; Verma, Abhinav

doi:10.1109/iceca.2017.8212727

Cited by 8 publications

(4 citation statements)

References 10 publications

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“…8 Given that the sounds we wish to monitor will probably last for several seconds, there is more than enough power to record the acoustic event. Going further, SRAM bits can be flipped at approximately 10-100 pW of power, 5,10 suggesting that rudimentary computation might be performed to determine if the flash memory bit should be written. Recorded bits might be read later using a passive RFID interrogation system, which can both read the recorded state and reset it.…”

Section: Flip-bit Data Storage and Rf Interrogation Systemmentioning

confidence: 99%

Saturn

2020

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We envision a new generation of computation devices, computational materials , which are self-sustainable, cheaply manufactured at scale and exhibit form factors that are easily incorporated into everyday environments. These materials can enable ordinary objects such as walls, carpet, furniture, jewelry, and cups to do computational things without looking like today's computational devices. Self-powered Audio Triboelectric Ultra-thin Rollable Nanogenerator (SATURN) is an early example of a computational material that can sense vibration, such as sound. SATURN can be manufactured from inexpensive components, is flexible so that it can be integrated into many different surfaces, and powers itself through the sound or vibration it is sensing. Using radio backscatter, we demonstrate that SATURN's sensed data is passively transmitted to remote computers, alleviating the need for batteries or any wired power for the material itself. The proliferation of these types of computational materials ushers an era of Internet of Materials, further blurring the distinction between the physical and digital worlds.

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Section: Flip-bit Data Storage and Rf Interrogation Systemmentioning

confidence: 99%

Saturn

2020

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“…However, the proposed 8T takes around 0.6ps to reach the 80% of the peak 1V (figure 6). In order to compare the time delay of the proposed model (implemented in 45 nm technology) with the conventional 8T SRAM [18], their model has been redesigned with 45nm technology. The calculated results along with the original results of the reference paper [18] are depicted in table I.…”

Section: Fig4 Time Delay Calculation Between Conventional 8t Sram Amentioning

confidence: 99%

“…In order to compare the time delay of the proposed model (implemented in 45 nm technology) with the conventional 8T SRAM [18], their model has been redesigned with 45nm technology. The calculated results along with the original results of the reference paper [18] are depicted in table I. The proposed 8T SRAM cell with 45nm length demonstrates better performance in terms of time delay for both writing and reading operations.…”

Section: Fig4 Time Delay Calculation Between Conventional 8t Sram Amentioning

confidence: 99%

“…Improving the power consumption has been a tough challenge for researcher. Table II shows the comparison of power consumption among different models of SRAM, where the conventional 6T SRAM [19] and 8T SRAM [18] are redesigned in 45 nm technology like the proposed model. The Proposed 8T (45nm) https://www.degruyter.com/view/j/cjece conventional 8T SRAM model which was simulated with the length of 45nm is compared with its own model of 180nm technology [18] in Table II alongside with the proposed 8T SRAM.…”

Section: Power Consumptionmentioning

confidence: 99%

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Characterization of Novel 8T SRAM with Low Leakage and Optimized Area

Sharif

Biswas

2019

Carpathian Journal of Electronic and Computer Engineering

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The fast evolution of battery functioned devices has caused approaches for decreasing power consumption in the memories is substantial. In this paper, a new proposal of SRAM with 8 transistors (8T) has been designed and also the cell itself is tested for its unique data overwriting and read propagation delays around 13.33% (read ‘1’) and 3.58% (read ‘0’) less compared to a conventional model. As the technology is attenuating, cell stability and increasing noise margin have become two crucial topics for the design metrics of SRAM, where our proposed cell appears with great stability on low voltage operation. Widespread simulation results authenticate the cogency and competency of the proposed 8T SRAM model using Cadence and 45nm predictive technology model (PTM).

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Stability and Power Analysis of Read Decoupled 8T SRAM Cell

Bansal

Tomar

2021

Advances in Intelligent Systems and Computing

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High speed 8T SRAM cell design with improved read stability at 180nm technology

Cited by 8 publications

References 10 publications

Saturn

Saturn

Characterization of Novel 8T SRAM with Low Leakage and Optimized Area

Stability and Power Analysis of Read Decoupled 8T SRAM Cell

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