High speed 850nm oxide VCSEL development for 100Gb/s ethernet at Broadcom

Development and characterization of 100Gb/s 940nm VCSELs for multimode optical links

“…The 940nm 100Gb/s VCSELs have the same structure as the Broadcom 100Gb/s 850nm VCSELs as described in [1,7], which is a top-emitting structure consisting of InGaAs multiple quantum wells sandwiched by top P-DBR and bottom N-DBR on a GaAs substrate. The epitaxial layers are grown in large-scale metal-organic chemical vapor deposition (MOCVD) reactor.…”

“…The market of 850nm 100Gb/s vertical-cavity surface-emitting lasers (VCSELs) has grown rapidly since their introduction because they enable low-cost, energy efficient and reliable short-reach solutions for data communication applications [1][2][3]. Broadcom VCSELs with dynamic performance over an extended temperature range and the capability for high volume manufacturing have been employed in multimode active optical cables (AOC) and transceivers for optical switch-to-server and switch-to-switch links in high speed interconnections (HSI) for the generative artificial intelligence (AI) infrastructures, data centers, cloud storage and enterprise networks.…”

“…Broadcom VCSELs with dynamic performance over an extended temperature range and the capability for high volume manufacturing have been employed in multimode active optical cables (AOC) and transceivers for optical switch-to-server and switch-to-switch links in high speed interconnections (HSI) for the generative artificial intelligence (AI) infrastructures, data centers, cloud storage and enterprise networks. To offer the high data rate and low noise required by the 100Gb/s per lane applications, multiple VCSEL design parameters have been optimized, including the differential gain to extend the optical modulation bandwidth, carrier transport, the electrical parasitic bandwidth, cavity detuning between the cold cavity resonance and active material gain to reduce lasing threshold, and the thermal conductivity of the distributed Bragg reflectors (DBRs) to reduce the junction temperature and thermal degradation [1].…”

100G VCSELs for bidirectional multi-mode links

“…The LIV characteristics of the 850 nm VCSEL over temperature are described in Ref. [1]. The optical power exceeds 4 mW at the bias current of 9 mA at 75C.…”

“…The entry of 850 nm VCSELs operating at 100 Gb/s enables the replacement of copper by multimode fiber in switch-to-server links as well as the upgrade of switch-toswitch links. 1,2 Standards based on 100G VCSELs have been developed recently for multimode Ethernet 3 and Fibre Channel links.…”