High spatial resolution spectroscopy of a single V-shaped quantum wire

Abstract

We report on microscopic photoluminescence of a single V-shaped AlGaAs/GaAs quantum wire. The experiments are performed at low temperature by selectively exciting 1 mu m2 of the sample. The main photoluminescence line is split into sharp peaks of width less than 0.5 meV and separated by a few meV. The energy position and the intensity of the peaks, are characteristic of the scanned quantum wire. First microphotoluminescence results suggest that localization phenomena are predominant in the quantum wire. They are due to the formation of extended monolayer-step islands, larger than the exciton radius, as in the case of high-quality quantum well

Local disorder and optical properties in V-shaped quantum wires: Toward one-dimensional exciton systems

“…The major role of monolayer fluctuations of the hetero-interfaces has first been identified in quantum wells (QW) [1,2] and is even more important in quantum wires (QWRs) due to the increased number of interfaces involved in the electronic confinement. The study of the local optical properties by high spatial resolution spectroscopy, in far-field [3] or in near-field [4,5], allowed a better insight into the understanding of localization in these structures.…”

Near-field optical imaging and spectroscopy of a coupled quantum wire-dot structure

“…Optical spectroscopy with subwavelength spatial resolution, e.g., confocal and near-field scanning optical microscopy ͑NSOM͒, allow one to address single nanostructures and to study their electronic properties. Both single quantum wires [1][2][3][4][5][6] and quantum dots [7][8][9][10][11] have been investigated in steady-state experiments. The recent successful combination of NSOM with time resolved techniques has opened the possibility to image carrier dynamics in single nanostructures by performing space and time resolved experiments.…”

A study for the cartography of the interface roughness of V-shaped AlGaAs/GaAs quantum wires

“…The study of the optical properties of low-dimensional semiconductor heterostructures, such as V-shaped quantum wires, has become the object of intensive research in recent years [1][2][3][4][5][6][7]. These optical properties can exploit the microscopic structure of the heterointerfaces which is essential in order to improve the optical and electronic properties of the nanostructures.…”