2005
DOI: 10.1117/12.570641
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High spatial resolution investigation of electroluminescence of InGaN/GaN multiple quantum wells by using scanning near-field optical microscopy and spectroscopy

Abstract: The electro-luminescence (EL) properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) with various emitting wavelength (purple, blue and green) were studied by scanning near-field optical microscope (SNOM). The high spatial resolution EL SNOM mappings and near-field spectra of the LEDs were acquired at various injection current conditions. The experiment shows that, though there are some common points, the EL properties of various LEDs are quite different. (i) The EL mappings show… Show more

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