High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays

Brown, J.D.; Matthews, John; Harney, S.; Boney, J.; Schetzina, J. F.; Benson, J. D.; Dang, Khoa V.; Nohava, Thomas; Yang, Wei; Krishnankutty, S.

doi:10.1557/proc-595-f99w1.9

Cited by 4 publications

(1 citation statement)

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“…Since then, progress with the back-illuminated p-i-n architecture has been rapid. The NCSU/Honeywell/NVESD group reported 32×32 and 128×128 back-illuminated UV FPAs with GaN absorber layers [6,7]. The first feasibility devices with AlGaN absorber layers with solar-blind cutoff wavelengths around 280 nm, corresponding to Al x Ga 1-x N x-values of 0.4, have been reported recently by Cree Lighting [8], the University of Texas [9], and NCSU [10].…”

Section: Introductionmentioning

confidence: 99%

AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications

et al. 2000

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This paper presents UV imaging results for a 256×256 AlGaN Focal Plane Array that uses a back-illuminated AlGaN heterostructure p-i-n photodiode array, with 30×30 µm² unit cells, operating at zero bias voltage, with a narrow-band UV response between 310 and 325 nm. The 256×256 array was fabricated from a multilayer AlGaN film grown by MOCVD on a sapphire substrate. The UV response operability (>0.4×average) was 94.8%, and the UV response uniformity (σ/µ) was 16.8%. Data are also presented for back-illuminated AlGaN p-i-n photodiodes from other films with cutoff wavelengths ranging between 301 and 364 nm. Data for variable-area diagnostic arrays of p-i-n AlGaN photodiodes with a GaN absorber (cutoff=364 nm) show: (1) high external quantum efficiency (50% at V=0 and 62% at V=-9 V); (2) the dark current is proportional to junction area, not perimeter; (3) the forward and reverse currents are uniform (σ/µ=50% for forty 30×30 µm² diodes at V=-40 V); (4) the reverse-bias dark current data versus temperature and bias voltage can be fit very well by a hopping conduction model; and (5) capacitance versus voltage data are consistent with nearly full depletion of the unintentionally-doped 0.4 µm thick GaN absorber layer and imply a donor concentration of 3-4×10 16 cm -3 .

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