2003
DOI: 10.1149/1.1585252
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High Sensitivity Semiconductor NO[sub 2] Gas Sensor Based on Mesoporous WO[sub 3] Thin Film

Abstract: A NO 2 gas sensor based on mesoporous WO 3 thin film with low operating temperatures and its sensing characteristics are reported. The mesoporous WO 3 thin film exhibits regular pores with an average pore size of 5 nm and specific surface area of 151 m 2 /g. Excellent sensing properties are found upon exposure to 3 ppm of NO 2 at 35-100°C for mesoporous WO 3 thin film. The sensor response is 180 for 3 ppm NO 2 at 100°C. The ability to sense NO 2 at such low temperatures is attributed to the large surface area … Show more

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Cited by 67 publications
(44 citation statements)
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“…The most important factors that influence the tungsten oxide sensor characteristics are microstructure and surface area. Mesoporous tungsten oxide with porous structure and higher surface area means more surface adsorption sites available to react with the NO 2 gas, inducing a lower operating temperature and a higher sensitivity of the sensor as reported by Teoh et al [26]. However, the tungsten oxide also has a good sensitivity for NO gas as reported in this paper.…”
Section: Gas-sensing Measurement For Mesoporous Tungsten Oxidesupporting
confidence: 61%
“…The most important factors that influence the tungsten oxide sensor characteristics are microstructure and surface area. Mesoporous tungsten oxide with porous structure and higher surface area means more surface adsorption sites available to react with the NO 2 gas, inducing a lower operating temperature and a higher sensitivity of the sensor as reported by Teoh et al [26]. However, the tungsten oxide also has a good sensitivity for NO gas as reported in this paper.…”
Section: Gas-sensing Measurement For Mesoporous Tungsten Oxidesupporting
confidence: 61%
“…[1][2][3][4] Thus, various methods used to fabricate WO 3 are reported, such as evaporation, [5][6][7] spray pyrolysis, 8 pulsed layer deposition 9,10 and electrodeposition. 11,12 However, the electrochemical anodization method adopted in this work provides a simple and economic way of synthesizing targeted morphologies such as nanoporous or nanotube structures.…”
mentioning
confidence: 99%
“…According to a report by Teoh et al 29 higher symmetry may result from static disorder, which can be ascribed to the presence of clusters of edge-sharing octahedral randomly distributed in the lattice. Indeed, the tendency to form edge-sharing octahedral is found in oxygen deficient tungsten oxides phase and the titanium substitution for tungsten will induce the same effect of oxygen substoichiometry.…”
Section: Resultsmentioning
confidence: 99%