A self-ordered and structure-controlled tin-modified mesoporous MCM-41 film was prepared by a molecule surfactant template method using spin-coating. This film was then used to fabricate a surface photovoltage (SPV) NO 2 gas sensor, based on a metal ± insulator ± semiconductor (MIS) structure. The SPV sensor thus produced showed a high sensitivity for NO 2 gas concentrations of 1 ppm, at room temperature. The sensor's responsiveness was also investigated. Compared to a SPV sensor with a pure mesoporous MCM-41 film, the tin-modified mesoporous MCM-41 film showed enhanced sensing properties for NO 2 .Mesoporous materials have attracted considerable attention because of their large surface area and porosity, uniform pore size distribution, ordered pore arrangement, and possible surface engineering. Since the first report of mesoporous silica (named MCM-41) in 1992, [1, 2] a number of studies have been performed aimed at modifying the mesoporous material structure in order to increase the potential applicability of these materials.