High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

Mishra, Saroj Kumar; Kachhawa, Pharyanshu; Jain, Amber Kumar; Thakur, Rajiv R.; Chaturvedi, Nidhi

doi:10.1039/d2lc00349j

Cited by 6 publications

(3 citation statements)

References 64 publications

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“…7 Biochemically functionalized field-effect transistor (FET) devices are well-suited for this application, since that target biomarkers in blood and interstitial fluid samples can directly provide electrical excitations via ionization in aqueous media. 8,9 Furthermore, the integration potential of FET devices in microfluidic systems enables convenient marker tests on-chip, thereby streamlining the analysis process. 10,11 Despite the potential benefits of the envisioned microfluidic biochip scenarios, their feasibility remains hindered due to the pathogenesis of cancers.…”

Section: Introductionmentioning

confidence: 99%

Multiplexed immunosensing of cancer biomarkers on a split-float-gate graphene transistor microfluidic biochip

Wang,

Gao

et al. 2024

Lab Chip

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Section: Introductionmentioning

confidence: 99%

Multiplexed immunosensing of cancer biomarkers on a split-float-gate graphene transistor microfluidic biochip

Wang,

Gao

et al. 2024

Lab Chip

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“…In this sense, biosensor technology can represent a very attractive alternative or complementary approach to detect this biomarker because of their inherent advantages such as simplicity, low cost and possible miniaturization. In fact, recently, different types of biosensors have been developed for HER2 detection [ 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. Considering the biorecognition element used in biosensors, antibodies are the most popular choice [ 15 ], but aptamers have emerged as an interesting alternative due to the great advantages they have over antibodies, such as higher specificity, greater design flexibility, and more stability and availability [ 23 ].…”

Section: Introductionmentioning

confidence: 99%

MoS2-Carbon Nanodots as a New Electrochemiluminescence Platform for Breast Cancer Biomarker Detection

et al. 2023

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In this work, we present the combination of two different types of nanomaterials, 2D molybdenum disulfide nanosheets (MoS2-NS) and zero-dimensional carbon nanodots (CDs), for the development of a new electrochemiluminescence (ECL) platform for the early detection and quantification of the biomarker human epidermal growth factor receptor 2 (HER2), whose overexpression is associated with breast cancer. MoS2-NS are used as an immobilization platform for the thiolated aptamer, which can recognize the HER2 epitope peptide with high affinity, and CDs act as coreactants of the anodic oxidation of the luminophore [Ru(bpy)3]2+. The HER2 biomarker is detected by changes in the ECL signal of the [Ru(bpy)3]2+/CD system, with a low detection limit of 1.84 fg/mL and a wide linear range. The proposed method has been successfully applied to detect the HER2 biomarker in human serum samples.

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“…Recently, GaN and SiC have emerged as wideband semiconductors which are adopted by the industry for a wide range of high voltage, power, sensing, and RF applications. [2][3][4][5][6][7][8][9] In particular, GaN is playing crucial role in RF power and monolithic microwave integrated circuits area for strategic applications. Theoretically, even better power figures of merits can be achieved with ultra-wide bandgap semiconductors like diamond, AlN, and β-Ga 2 O 3 .…”

mentioning

confidence: 99%

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

Kachhawa,

Jain,

Chaturvedi

2023

Physica Status Solidi (a)

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Herein, ultra‐wideband gap semiconductor β‐gallium oxide (β–Ga2O3) over sapphire ( orientation) is investigated for ohmic contact improvement with the help of argon (Ar)‐based reactive ion etching (RIE). Postannealing effects of these contacts over ( orientation) gallium oxide samples are also investigated. The surface defects and oxygen vacancies generated by Ar etching lead to the formation of as‐deposited ohmic contacts with the Ti/Au metal stack. A contact resistance of 10.52 Ω mm with a specific contact resistivity of 2.24 × 10−4 Ω cm2 is achieved with 10 min Ar RIE prior metallization. However, the contacts further degrade when samples are subjected to annealing. The electrical measurements and energy‐dispersive X‐ray spectroscopy elemental mappings at samples after annealing reveal that it is due to the formation of titanium oxide (TiOx) compound which acts as an insulator and concurrent with the out‐diffusion of Ga and in‐diffusion of gold. These results show the impact of anisotropy of gallium oxide over different annealing temperatures. These results and techniques may pave the way for better ohmic contacts for gallium oxide‐based high‐voltage and high‐power applications.

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High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

Abstract: This work reports rapid, label-free and specific detection of HER2 antigen using gallium nitride (GaN) high electron mobility transistor (HEMT). Thiol-based chemistry has been utilized to immobilize the corresponding HER2...

Cited by 6 publications

References 64 publications

Multiplexed immunosensing of cancer biomarkers on a split-float-gate graphene transistor microfluidic biochip

Multiplexed immunosensing of cancer biomarkers on a split-float-gate graphene transistor microfluidic biochip

MoS2-Carbon Nanodots as a New Electrochemiluminescence Platform for Breast Cancer Biomarker Detection

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

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