High-sensitivity EUV Resists based on Tetrafluoroethylene contained Fluoropolymers

Yamashita, Tsuneo; Morita, Masamichi; Tanaka, Yoshito; Santillan, Jullius Joseph; Itani, Toshiro

doi:10.2494/photopolymer.24.165

Cited by 7 publications

(8 citation statements)

References 38 publications

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“…The deprotection of partially protected polymers has been used to change the polarity of resist polymers. [2][3][4] High sensitivity is obtained through the enhancement of chemical reactions via a chain-reaction mechanism. An acid molecule generated upon exposure to radiation, such as extreme ultraviolet (EUV) radiation, diffuses in the resist matrix and occasionally induces the deprotection of the polymer when it happens to encounter a protected unit.…”

Section: Introductionmentioning

confidence: 99%

Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Kozawa

Santillan

Itani

2013

Jpn. J. Appl. Phys.

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125

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With the approach of the realization of extreme ultraviolet (EUV) lithography, practical issues such as the defects of resist patterns have attracted attention. In this study, the defects of line-and-space resist patterns were investigated from the viewpoint of the stochastic effects of chemical reactions. The stochastic effect was expressed using the standard deviation σ of the protected-unit concentration. To eliminate bridges within a 6.8 µm length in the line direction, a 1.5–2.0σ difference is required between the average protected-unit concentration and the dissolution point at the center of the space. To eliminate line breaks and severe pinching within a 6.1 µm length in the line direction, a 1.2–1.6σ difference is required between the average protected-unit concentration and the dissolution point at the center of the resist line pattern.

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Section: Introductionmentioning

confidence: 99%

Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Kozawa

Santillan

Itani

2013

Jpn. J. Appl. Phys.

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125

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“…Using the absorbed energy, an acid image is formed. By heating the samples, a latent image is formed through the acid catalytic chain reaction (generally, the deprotection of partially protected polymers [2][3][4] ). By developing the chemical latent image, a resist pattern is obtained.…”

Section: Introductionmentioning

confidence: 99%

Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

Kozawa

Santillan

Itani

2014

Jpn. J. Appl. Phys.

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The resolution of extreme ultraviolet (EUV) lithography with chemically amplified resist processes has reached 16 nm (half-pitch). The development of chemically amplified resists is ongoing toward the 11 nm node. However, the stochastic effects are increasingly becoming a significant concern with the continuing shrinkage of features. In this study, the fluctuation of protected unit distribution caused by the stochastic effects during image formation was investigated assuming line-and-space patterns with 11 nm half-pitch. Contrary to expectations, the standard deviation of the number of protected units connected to a polymer after postexposure baking (PEB) did not differ from that for 16 nm half-pitch. The standard deviation after PEB increased with the effective reaction radius for deprotection and the initial standard deviation before PEB. Because of the severe requirements for resist processes, the stochastic effects in chemical reactions should be taken into account in the design of next-generation resists.

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“…Self Aligned Double Patterning [4] for 3x nm and 2x nm. Further size reduction requires triple or quadruple patterning, and it causes huge increase of CoO and the difficulty of overlay [5] Extreme ultraviolet (EUV) lithography has been the favorite candidate of successor of immersion ArF [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] [26][27][28][29][30][31][32][33][34]. Application of DSA materials may extend immersion ArF and support the rise of EUV.…”

Section: Introductionmentioning

confidence: 99%

Directed Self Assembly Material Development for Fine Patterning and Pattern Repair

Minegishi¹,

Namie²,

Izumi³

et al. 2013

J. Photopol. Sci. Technol.

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The Directed Self-Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Polystyreneb-polymethylmethacrylate (PS-b-PMMA) block copolymer (BCP) is a typical material used in DSA, but more advanced materials are required for achieving patterning less than 10 nm in size. High-χ block copolymers are being researched as next generation PS-b-PMMA material successors. Polymers with high-χ produce smaller pattern sizes than PS-b-PMMA. However, doing DSA with these high-χ materials requires a special method to separate one phase of BCPsuch as phase separation in solvent. We have done further research to improve high-χ materials to enable better DSA technology. Here we report 8.4 nm half-pitch line patterns were formed with our high-χ block co-polymer, annealing under air. DSA is a candidate for next generation lithography. However, DSA materials are not used alone. DSA materials are always used with guide pattern to "direct" self assembly materials. Currently ArF resist is well studied as guide pattern. ArF resist is extended to use further generation, but the required resolution level is already severe for 193nm patterning. Employment of blend DSA could improve the ArF pattern profile.

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High-sensitivity EUV Resists based on Tetrafluoroethylene contained Fluoropolymers

Cited by 7 publications

References 38 publications

Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

Directed Self Assembly Material Development for Fine Patterning and Pattern Repair

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