Abstract:A method was developed to measure low level oxygen concentration in thin epitaxial silicon film (epi film) by measuring photoluminescence (PL) intensity of an oxygen-carbon complex (C center) formed in silicon crystal by carbon implantation (energy: 20 keV). A calibration curve between the PL intensity of the C center and the oxygen concentration of standard samples for each carbon implantation fluence was obtained. In order to measure the oxygen distribution of the depth direction in an epi sample with the ep… Show more
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