High-sensitivity and broadband PEDOT:PSS–silicon heterojunction photodetector

Noroozi, Aliakbar; Mosaddegh, Amirhossein; Abdi, Yaser

doi:10.1016/j.mseb.2021.115260

Cited by 18 publications

(4 citation statements)

References 31 publications

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“…Moreover, the achieved values of R λ and D λ are comparable to that of state‐of‐the‐art heterojunction‐based Si detectors (Table S1, Supporting Information). [ 17,19,49–57 ]…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the achieved values of R λ and D λ are comparable to that of state-of-the-art heterojunction-based Si detectors (Table S1, Supporting Information). [17,19,[49][50][51][52][53][54][55][56][57] The detection speed was tested under a 1000 Hz light pulse. The rise time was estimated as a required time for the current to reach 90% of the stabilizing level under light injection; the decay time was defined as the time required to fall to 10% of the saturation level after turning off the light source.…”

Section: Optoelectronic Properties Of Ocvd Pedot-covered Black-si Det...mentioning

confidence: 99%

“…[15,16] Conductive polymers, such as poly(3,4-ethylene dioxythiophene) (PEDOT) and its derivatives, are promising alternatives for the transport layers due to their low refractive index (1.2-1.6) close to air. [17][18][19][20][21] Furthermore, their relatively affordable and straightforward process is another key benefit for making the materials attractive compared to other inorganic counterparts. However, the relatively low charge mobility, inefficient charge extraction capability from the Si, and poor step-coverage of conventional solution-processed polymers remain unresolved.…”

Section: Introductionmentioning

confidence: 99%

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Hybrid Silicon‐Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High‐Performance and Bias‐Switchable Multi‐Functionality

Kim

Zhang

Rothschild

et al. 2022

Adv Funct Materials

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Black silicon (b‐Si) featured by anti‐reflective surfaces is extensively studied to realize highly sensitive photodetectors. The key to augmenting the light‐detection capability of b‐Si is to facilitate charge extraction while limiting undesired recombination events at surface defects. To this end, oxidative chemical vapor deposition (oCVD) is leveraged to form a highly conformal and conductive (3000 S cm−1) organic transport layer, poly(3,4‐ethylenedioxythiophene) (PEDOT), on b‐Si nanostructures. The oCVD PEDOT instrumentally extracts photo‐induced charges, through which b‐Si photodetectors implementing oCVD PEDOT achieve a superior photo‐detectivity of 1.37 × 1013 Jones. Furthermore, by engineering the pore dimension of b‐Si, a mode‐tunable Si photodetector is contrived, where the functions of broad‐band and visible‐blinded modes are switched facile by a bias polarity. The unprecedented device paves the way for extending the applications of Si detectors toward novel sensory platforms such as night‐vision, motion tracking, and bio‐sensing.

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“…Moreover, the achieved values of R λ and D λ are comparable to that of state‐of‐the‐art heterojunction‐based Si detectors (Table S1, Supporting Information). [ 17,19,49–57 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Optoelectronic Properties Of Ocvd Pedot-covered Black-si Det...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hybrid Silicon‐Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High‐Performance and Bias‐Switchable Multi‐Functionality

Kim

Zhang

Rothschild

et al. 2022

Adv Funct Materials

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show abstract

“…[7] Despite the significance of photodetectors and the progress made in machine learning (ML) techniques, a research gap exists in the comprehensive ML modeling of photodetector performance prediction. Existing experimental studies have predominantly focused on specific aspects of photodetector optimization, such as material characterization, [8,9] device architecture, [10][11][12] or fabrication process refinement. [13,14] However, there is a noticeable lack of research dedicated to predicting photodetector responsivity using ML models.…”

Section: Introductionmentioning

confidence: 99%

Predicting Photodetector Responsivity through Machine Learning

Arjmandi‐Tash,

Mansourian,

Rahsepar

et al. 2024

Advcd Theory and Sims

Self Cite

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This study introduces a novel methodology for predicting photodetector responsivity, specifically targeting challenging materials like borophene. The synthesis of these materials faces substantial experimental complexities, necessitating reliable performance predictions before fabrication. To address this, a comprehensive approach leveraging advanced machine learning techniques, specifically artificial neural networks (ANN), is developed. Integration of X‐ray diffraction (XRD) and Raman spectra data into AI models enables efficient prediction of photodetector efficiency prior to device fabrication. The innovation lies in strategically incorporating Generative Adversarial Networks (GANs) for dataset augmentation, significantly expanding the dataset size and enhancing the robustness of the ANN model. Sensitivity analyses highlighted influential factors such as bias voltage and spectral coefficients, validating the approach and aligning with recent experimental findings. This methodology not only advances optoelectronics, but also holds promise for materials science and device engineering. Predictions for Wavelength‐Responsivity plots, considering borophene allotropes as active layers and n‐Si as substrates, show peaks around 300–400 nm, ranging from 0.04 to 0.36 AW−1 at bias voltages between 1 and 5 volts. These estimations assume a borophene layer thickness of approximately 1.6 nm and a radiation power intensity of 5000 µ Wcm−2.

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Conformal MoS₂/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection

Mei

Zhang

Shi

et al. 2021

Adv Funct Materials

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2D layered materials have attracted considerable attention for fabricating IR photodetectors. However, performance, especially for weak signal detection, of these IR photodetectors is often limited by the low absorbance of the very thin active materials as well as unsuppressed dark currents. Herein, a photodetector with high sensitivity for ultraweak IR signals based on a conformal MoS2/silicon nanowire array heterojunction with an ultrathin Al2O3 interfacial passivation layer is reported. The conformal light‐trapping nanoarray structure can greatly enhance broadband IR absorption, while the Al2O3 layer can suppress interface carrier recombination effectively and thus lower reverse dark current. The photodetectors exhibit broadband photoresponse ranging from 300 to 1600 nm, low noise current of 0.11 pA Hz−1/2, large responsivity up to 0.61 A W−1 at zero bias voltage, and high specific detectivity of 1011–1012 Jones. Significantly, the devices are capable of detecting ultraweak IR signals (e.g., 100 pW at 808 nm and 3 nW at 1310/1550 nm) with high on–off ratios without applying any external bias. This work proposes a new strategy to enhance light absorption of 2D materials and construct high‐quality junction based on them, which is promising for low‐cost and high‐performance optoelectronic devices.

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High-sensitivity and broadband PEDOT:PSS–silicon heterojunction photodetector

Cited by 18 publications

References 31 publications

Hybrid Silicon‐Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High‐Performance and Bias‐Switchable Multi‐Functionality

Hybrid Silicon‐Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High‐Performance and Bias‐Switchable Multi‐Functionality

Predicting Photodetector Responsivity through Machine Learning

Conformal MoS₂/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection

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High-sensitivity and broadband PEDOT:PSS–silicon heterojunction photodetector

Cited by 18 publications

References 31 publications

Hybrid Silicon‐Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High‐Performance and Bias‐Switchable Multi‐Functionality

Hybrid Silicon‐Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High‐Performance and Bias‐Switchable Multi‐Functionality

Predicting Photodetector Responsivity through Machine Learning

Conformal MoS2/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection

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Conformal MoS₂/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection