High-sensitivity 25 Gbit/s avalanche photodiode receiver optical sub-assembly for 40 km transmission

Nada, Masahiro; Muramoto, Y.; Yokoyama, Haruki; Ishibashi, Tadao; Kodama, Satoshi

doi:10.1049/el.2012.1081

Cited by 23 publications

(9 citation statements)

References 5 publications

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“…is dead-space, w is avalanche width, v e and v h are electron and hole drift velocities respectively. c and c are constants defined by (23) and (24) in [6], calculated using…”

Section: B Modification Of the Model For Optical Receivers Based On mentioning

confidence: 99%

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Sensitivity Calculations of High-Speed Optical Receivers Based on Electron-APDs

Shulyak

Hayat

2020

J. Lightwave Technol.

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Sensitivity of high-speed optical receivers is heavily influenced by the performance of the optical detectors used in the receivers, the data rate, and the target bit-error-rate (BER). A simulation model for sensitivity of optical receivers based on electron-avalanche photodiodes (e-APDs) is presented. It allows for the optimization of avalanche width and operating voltage to achieve the optimum receiver sensitivity for given bit rate and target BER. The effects modelled include inter-symbol interference (ISI), various dark current components (tunnelling, diffusion, and generation), current impulse duration, avalanche gain, and amplifier's noise. The model was demonstrated through simulations of Indium Arsenide (InAs) e-APDs. For 10 −12 target BER, the receiver's sensitivities were found to be −30.6, −22.7, −19.2, and −16.6 dBm, for 10, 25, 40, and 50 Gb/s data rate, respectively. Desirable avalanche properties of InAs e-APDs are counteracted by detrimental effects of high dark currents. Hence InAs e-APDs with lower dark currents are required to be more competitive with other optical detector technologies for high-speed optical receivers. The data reported in this article is available from the ORDA digital repository (

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“…is dead-space, w is avalanche width, v e and v h are electron and hole drift velocities respectively. c and c are constants defined by (23) and (24) in [6], calculated using…”

Section: B Modification Of the Model For Optical Receivers Based On mentioning

confidence: 99%

“…The results are for data rates of 10, 25 and 40 Gb/s. Other high speed detector systems (other symbols, using identical color scheme for the different bit-rates), such as InAlAs APDs [23], [24], Ge/Si APD [25], and SOA-PIN combinations [26]- [28] are included for comparison.…”

Section: Sensitivity At Different Avalanche Widths and Bit Ratesmentioning

confidence: 99%

Sensitivity Calculations of High-Speed Optical Receivers Based on Electron-APDs

Shulyak

Hayat

2020

J. Lightwave Technol.

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“…Nevertheless, it requires high sensitivity and high bit rate receiver to be used in 25 Gbit/s and 40 Gbit/s PON networks. Recently, a 25 Gbit/s APD receiver was demonstrated by NTT 5 with a high sensitivity of -21.9 dBm. For bit rate above 25 Gbit/s, the only available solution is optical preamplification which, compared to APD solution, offers the advantage to tune the preamplification gain without compromising the speed response.…”

Section: Introductionmentioning

confidence: 99%

High sensitivity 40 Gbit/s preamplified SOA-PIN/TIA receiver module for high speed PON

Caillaud

Chanclou

Blache

et al. 2014

2014 the European Conference on Optical Communication (ECOC)

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“…We have proposed a unique InAlAs/InGaAs APD structure and demonstrated high-sensitivity operation with a GB product of 235 GHz [2, 3]. One-and four-lanes receiver optical sub-assembly (ROSA) modules using such APDs have also been fabricated, and 25 Gbit/s, over 40 km transmission has been demonstrated [4,5].Another important concern about APD performance is the highpower tolerance in order to ensure a wide input-signal dynamic range. In general, an APD has less tolerance against possible input level than that of a photodiode (PD) because an APD is operated at much higher voltage and the nonlinear effect in the APD can be stronger.…”

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confidence: 99%

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High‐power‐tolerant InAlAs avalanche photodiode for 25 Gbit/s applications

et al. 2013

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A wide optical-input dynamic range is demonstrated for an inverted pdown InAlAs/InGaAs avalanche photodiode. The 3 dB down bandwidth maintains a value as high as 18 GHz for an input optical power level of up to + 2.5 dBm. Such high-power tolerance meets the requirements of various future optical fibre communications systems such as 100 Gbit/s Ethernet which has a serial baud rate of 25 Gbit/s. Introduction: Optical fibre communications systems are advancing year by year, and the serial baud rate is growing. For example, 100 Gbit/s Ethernet systems employ four lanes of 25 Gbit/s. One such system that covers a transmission distance of 40 km has been standardised as 100GBASE-ER4 [1]. To satisfy the receiver sensitivity in the ER4 standard, employing semiconductor optical amplifiers (SOAs) could be a solution. However, the power consumption of a SOA is relatively high and the module size tends to be large.Recently, avalanche photodiodes (APDs) have attracted much attention as an alternative to SOAs. Here the most important parameter for an APD is high multiplied responsivity, which requires sufficient unitygain responsivity and a high gain-bandwidth (GB) product, simultaneously. We have proposed a unique InAlAs/InGaAs APD structure and demonstrated high-sensitivity operation with a GB product of 235 GHz [2, 3]. One-and four-lanes receiver optical sub-assembly (ROSA) modules using such APDs have also been fabricated, and 25 Gbit/s, over 40 km transmission has been demonstrated [4,5].Another important concern about APD performance is the highpower tolerance in order to ensure a wide input-signal dynamic range. In general, an APD has less tolerance against possible input level than that of a photodiode (PD) because an APD is operated at much higher voltage and the nonlinear effect in the APD can be stronger. Recently, high-power tolerance and a wide dynamic range of over 25 dB for 1 and 10 Gbit/s APDs have been reported [6]; however, that for 25 Gbit/s has not yet been investigated.In the work reported in this Letter, we investigated the high optical-input operation of an InAlAs/InGaAs APD with an inverted p-down structure [2, 3]. We confirm APD operations for an optical-input range of up to + 4.5 dBm. Furthermore, the 3 dB bandwidth ( f 3dB ) of 18 GHz is maintained for an input range of up to + 2.5 dBm.

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High-sensitivity 25 Gbit/s avalanche photodiode receiver optical sub-assembly for 40 km transmission

Cited by 23 publications

References 5 publications

Sensitivity Calculations of High-Speed Optical Receivers Based on Electron-APDs

Sensitivity Calculations of High-Speed Optical Receivers Based on Electron-APDs

High sensitivity 40 Gbit/s preamplified SOA-PIN/TIA receiver module for high speed PON

High‐power‐tolerant InAlAs avalanche photodiode for 25 Gbit/s applications

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