High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Sun, Bingyang; Sun, Wei‐Ming; Li, Shan; Ma, Guoliang; Jiang, Wanshun; Yan, Zuyong; Wang, Xia; An, Yarui; Li, Peigang; Liu, Zeng; Tang, Weihua

doi:10.1016/j.optcom.2021.127483

Cited by 26 publications

(13 citation statements)

References 30 publications

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“…The photo-to-dark current ratio (PDCR) is a critical parameter for evaluating the amplification rate and partial discharge sensitivity of the photodetector and is determined by eq PDCR = I normalp − I dark I dark where I p and I dark represent the current with light and without light, respectively. The PDCR plots of Ga 2 O 3 – x Ti 3 C 2 T x show that Ga 2 O 3 –5Ti 3 C 2 T x exhibits a peak PDCR of 2.6 × e10 3 (Figure b), implying improved discharge sensitivity than pure Ga 2 O 3 nanowires.…”

Section: Resultsmentioning

confidence: 99%

“…Solar-blind photodetectors are widely used for outdoor applications, such as military flame sensors, missile detection systems, electric arc sensing, and environmental and biological research . The materials for constructing UV photodetectors are ultrawide-band gap semiconductors, such as AlGaN, Ga 2 O 3 , and diamond . Ga 2 O 3 is a promising semiconductor material as it possesses an ultrahigh band gap of 4.2–5.2 eV for photodetectors. , However, the practical application of Ga 2 O 3 is still limited by its defects, such as low conductivity and long response time.…”

Section: Introductionmentioning

confidence: 99%

“…3 The materials for constructing UV photodetectors are ultrawide-band gap semiconductors, such as AlGaN, 4 Ga 2 O 3 , 5 and diamond. 6 Ga 2 O 3 is a promising semiconductor material as it possesses an ultrahigh band gap of 4.2−5.2 eV for photodetectors. 7,8 However, the practical application of Ga 2 O 3 is still limited by its defects, such as low conductivity 2 and long response time.…”

Section: Introductionmentioning

confidence: 99%

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Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

et al. 2023

ACS Appl. Nano Mater.

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Ga 2 O 3 is a promising semiconductor for solar-blind (200−280 nm) photodetectors. Two-dimensional (2D) MXenes have been widely applied in the optoelectronic area owing to their high conductivity and large specific surface area. The few-layered Ti 3 C 2 T x (Ti 3 C 2 T x -few) exhibits elevated properties compared with multilayered Ti 3 C 2 T x . Herein, we innovatively adopt a hydrothermal method to prepare Ti 3 C 2 T x -few. A Ga 2 O 3 −Ti 3 C 2 T x 3D network heterojunction is fabricated by van der Waals interaction between one-dimensional (1D) nanowires and 2D nanosheets using the light trapping effect at the interface of the heterostructure. The van der Waals force between Ga 2 O 3 and Ti 3 C 2 T x -few enhances the contact for the transfer of photoelectrons. The optimal Ga 2 O 3 −5Ti 3 C 2 T x exhibits enhanced responsivity (140.57 mA W −1 ), defectivity (4.87 × 10 12 Jones), and external quantum efficiency (68.66%), which are 6.67, 3.20, and 6.68 times higher than that of pure Ga 2 O 3 nanowires under deepultraviolet light (254 nm). The improved properties of Ga 2 O 3 −xTi 3 C 2 T x heterostructure are attributed to the high conductivity of Ti 3 C 2 T x -few, enhanced separation of photogenerated electrons and holes, decreased Schottky barrier height, enlarged depletion region, increased UV light absorption, and enhanced contact via van der Waals force between Ga 2 O 3 and Ti 3 C 2 T x . In conclusion, the Ga 2 O 3 −Ti 3 C 2 T x heterojunction extends the application of Ti 3 C 2 T x -few and provides a new tactic to improve the performance of the Ga 2 O 3 -based photodetector.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

et al. 2023

ACS Appl. Nano Mater.

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“…In previous reports, ,− most Ga 2 O 3 -based photodetectors were irradiated under UV light with a wavelength of 254 nm (4.88 eV). However, the optical band gap of Ga 2 O 3 is slightly larger than its forbidden band width (4.9 eV) because of the Bostein shift, so UV light with a wavelength of lower than 254 nm should be more suitable for testing the response characteristics of the Ga 2 O 3 -based device.…”

Section: Resultsmentioning

confidence: 99%

Ta-Doped Ga₂O₃ Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

Chen

Wang

Liu

et al. 2022

Crystal Growth & Design

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Self-powered solar-blind Ga2O3-based photodetectors based on polycrystalline films rather than single-crystal films have been widely studied. In this work, Ta-doped Ga2O3 single-crystal films deposited on porous p-type GaN substrates by metal–organic chemical vapor deposition (MOCVD) were prepared as self-powered solar-blind photodetectors. As the porosity of the substrate increased, the crystal quality of the deposited film was optimized, probably resulting from the reduction of threading dislocations (TDs). The epitaxial relation between the β-Ga2O3 single-crystal film and the GaN substrate was β-Ga2O3 (2̅01) || GaN (0001) with β-Ga2O3 [010] || GaN <21̅1̅0>. Compared with the photodetector based on the β-Ga2O3 grown on as-grown p-GaN, the detector based on the β-Ga2O3 deposited on porous p-GaN presented fast rise/decay times (0.41 s/0.34 s) and high photoelectric responsivity (3.54 × 10–2 A/W) at 222 nm without bias because of the electron–hole pairs separated by the in-built electric field rapidly, indicating good solar-blind response ability.

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“…Future self-powered photodetectors are expected to exhibit high performance, including fast response speed, high responsivity, high on-off ratio, excellent spectrum selectivity, and stability [2]. To improve the photoresponse characteristics of photodetectors, studies have been conducted on their materials, processes, and structures [3][4][5][6][7][8][9][10][11]. The properties of photodetectors can be easily adjusted with alternate materials or by developing novel materials.…”

Section: Introductionmentioning

confidence: 99%

A Self-Powered High-Responsivity, Fast-Response-Speed Solar-Blind Ultraviolet Photodetector Based on CuO/β-Ga2O3 Heterojunction with Built-In Potential Control

et al. 2023

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Controlling built-in potential can enhance the photoresponse performance of self-powered photodetectors. Among the methods for controlling the built-in potential of self-powered devices, postannealing is simpler, more efficient, and less expensive than ion doping and alternative material research. In this study, a CuO film was deposited on a β-Ga2O3 epitaxial layer via reactive sputtering with an FTS system, and a self-powered solar-blind photodetector was fabricated through a CuO/β-Ga2O3 heterojunction and postannealed at different temperatures. The postannealing process reduced the defects and dislocations at the interface between each layer and affected the electrical and structural properties of the CuO film. After postannealing at 300 °C, the carrier concentration of the CuO film increased from 4.24 × 1018 to 1.36 × 1020 cm−3, bringing the Fermi level toward the valence band of the CuO film and increasing the built-in potential of the CuO/β-Ga2O3 heterojunction. Thus, the photogenerated carriers were rapidly separated, increasing the sensitivity and response speed of the photodetector. The as-fabricated photodetector with 300 °C postannealing exhibited a photo-to-dark current ratio of 1.07 × 103; responsivity and detectivity of 30.3 mA/W and 1.10 × 1012 Jones, respectively; and fast rise and decay times of 12 ms and 14 ms, respectively. After three months of storage in an open-air space, the photocurrent density of the photodetector was maintained, indicating good stability with aging. These results suggest that the photocharacteristics of CuO/β-Ga2O3 heterojunction self-powered solar-blind photodetectors can be improved through built-in potential control using a postannealing process.

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High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Cited by 26 publications

References 30 publications

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ta-Doped Ga₂O₃ Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

A Self-Powered High-Responsivity, Fast-Response-Speed Solar-Blind Ultraviolet Photodetector Based on CuO/β-Ga2O3 Heterojunction with Built-In Potential Control

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High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Cited by 26 publications

References 30 publications

Ga2O3–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ga2O3–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ta-Doped Ga2O3 Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

A Self-Powered High-Responsivity, Fast-Response-Speed Solar-Blind Ultraviolet Photodetector Based on CuO/β-Ga2O3 Heterojunction with Built-In Potential Control

Contact Info

Product

Resources

About

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ta-Doped Ga₂O₃ Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors