High sensing response of β-Ga2O3 thin film towards ammonia vapours: Influencing factors at room temperature

Pandeeswari, R.; Jeyaprakash, B.G.

doi:10.1016/j.snb.2014.01.025

Cited by 135 publications

(54 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, high-concentration ammonia is toxic for human beings. The maximum allowed exposure level of ammonia recommended by the Occupational Safety and Health Administration (OSHA) is 25 ppm [6]. Hence, the development and fabrication of high-performance ammonia gas sensors to continuously detect leakages and monitor ammonia is a key issue for the safety of environments.…”

Section: Introductionmentioning

confidence: 99%

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

et al. 2015

View full text Add to dashboard Cite

An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good sensing performance, including a high-sensing response ratio of 289%, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH 3 /air gas at 250°C and 350°C, respectively. In addition, the studied sensor device exhibits a lower detection limit (<5 ppm NH 3 /air) at 250°C. Consequently, based on these advantages and inherent benefits of low cost, chemical stability, and easy fabrication, etc., the studied NiO thin-film sensor shows the promise for high-performance ammonia gas sensing applications.

show abstract

Section: Introductionmentioning

confidence: 99%

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

et al. 2015

View full text Add to dashboard Cite

show abstract

“…The anisotropy of the ␤-Ga 2 O 3 , including electrical and optical properties has already been investigated by Binet and Gourier [9] and Ueda et al [10]. At present, the ␤-Ga 2 O 3 films could be prepared by many methods, such as molecular beam epitaxy (MBE) [11], pulsed laser deposition [12], plasma enhanced atomic layer deposition (PEALD) [13], electron beam evaporation [14], radio frequency magnetron sputtering [15], spray pyrolysis technique [16], sol-gel method [17], metal organic chemical vapor deposition (MOCVD) [18] and metal organic vapor phase epitaxy (MOVPE) [1]. In our experiment, the MOCVD method is chosen for its flexibility, controllability, scalability into larger commercial systems, and applicability to current device technology [19,20].…”

Section: Introductionmentioning

confidence: 99%

Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

Chen

Liang

Xia

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

“…,49 Until now, very few sensors has shown negligible humidity effect at room temperature. In this work, the influence of humidity on the response of ZnO nanorods was investigated towards 100 ppm of hydrogen sulfide and the observed results are depicted inFig.…”

mentioning

confidence: 99%

Selective recognition of hydrogen sulfide using template and catalyst free grown ZnO nanorods

Mani

Rayappan

2015

RSC Adv.

View full text Add to dashboard Cite

Hydrogen sulfide is one of the important endogenous signaling molecules which can play a key role in regulating blood pressure, cardiovascular and age-associated diseases. But it is extremely toxic if inhaled externally and even can cause death at higher concentrations. This work reports a systematic investigation of template and catalyst free grown ZnO nanorods through simple chemical spray pyrolysis technique and their room temperature hydrogen sulfide sensing characteristics such as sensitivity, selectivity, stability, response and recovery times. The structural, morphological, optical and electrical properties of ZnO nanostructures were investigated using X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), UV-vis spectrophotometer and electrometer respectively. The role of density of nanorods formed on the glass substrates through spray cycle modulation has been used as an effective tool for achieving better sensing response. ZnO nanorods with the diameter ranging from 200 -250 nm exhibited high selectivity towards hydrogen sulfide and the mechanism has been reported. The challenge of selectivity has also been solved efficiently through ZnO nanorods.

show abstract

High sensing response of β-Ga2O3 thin film towards ammonia vapours: Influencing factors at room temperature

Cited by 135 publications

References 30 publications

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

Selective recognition of hydrogen sulfide using template and catalyst free grown ZnO nanorods

Contact Info

Product

Resources

About