2014
DOI: 10.1364/ol.39.001799
|View full text |Cite
|
Sign up to set email alerts
|

High RF carrier frequency modulation in silicon resonators by coupling adjacent free-spectral-range modes

Abstract: We demonstrate the modulation of silicon ring resonators at RF carrier frequencies higher than the resonance linewidth by coupling adjacent free-spectral-range (FSR) resonance modes. In this modulator scheme, the modulation frequency is matched to the FSR frequency. As an example, we demonstrate a 20 GHz modulation in a silicon ring with a resonance linewidth of only 11.7 GHz. We show theoretically that this modulator scheme has lower power consumption compared to a standard silicon ring modulator at high carr… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
32
0

Year Published

2014
2014
2021
2021

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 37 publications
(35 citation statements)
references
References 18 publications
1
32
0
Order By: Relevance
“…8, a 4 × 3 array of silicon rings with free spectral range of each ring at 26 GHz as experimentally demonstrated in ref. 44 (which coincide with the modulation frequency), with an effective coupling constant t xy = t f =8 GHz and an internal loss rate of 2.7 GHz ( Q =2 × 10 5 ), suffice to demonstrate the one-way frequency conversion in the Fermi-arc surface state described in the previous section. The entire array can fit into a 3 × 4 mm 2 chip, which can be further reduced to 1 × 1 mm 2 by increasing the modulation frequency to 50 GHz and folding of the ring45, as shown in Supplementary Fig.…”
Section: Discussionmentioning
confidence: 73%
“…8, a 4 × 3 array of silicon rings with free spectral range of each ring at 26 GHz as experimentally demonstrated in ref. 44 (which coincide with the modulation frequency), with an effective coupling constant t xy = t f =8 GHz and an internal loss rate of 2.7 GHz ( Q =2 × 10 5 ), suffice to demonstrate the one-way frequency conversion in the Fermi-arc surface state described in the previous section. The entire array can fit into a 3 × 4 mm 2 chip, which can be further reduced to 1 × 1 mm 2 by increasing the modulation frequency to 50 GHz and folding of the ring45, as shown in Supplementary Fig.…”
Section: Discussionmentioning
confidence: 73%
“…For modulation, the value of κ 1 and κ ′ corresponds to the efficiency for conversion to other frequencies after an incident wave with a certain frequency passes through the modulator. Our choice of κ 1 and κ ′ above corresponds to a conversion efficiency of 2% and 5 × 10 −5 %, which is reasonable for electro-optic modulators [22][23][24][25]. To observe the signal with the modulation in a time scale at the order of 4T in Figure 5 requires a loss < 10 −4 in energy per round trip.…”
Section: Realistic Realization In Ring Resonators Under Dynamic Mmentioning
confidence: 99%
“…The strength of the effective force is F jΔ∕Ω R j, which leads to a Bloch oscillation with a period T B 2π∕Δ [24,30]. We now proceed with a more realistic model of a ring under dynamic modulation [16,31]. We expand the electric field inside the resonator as [32] Et; r ⊥ ; z X m E m t; zE m r ⊥ e iω m t ;…”
Section: Theoretical Analysismentioning
confidence: 99%