High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga<sub>2</sub>O<sub>3</sub> thin film*

Zhi, Yusong; Jiang, Wanshun; Liu, Zeng; Liu, Yuan-Yuan; Chu, Xuan; Liu, Jia-Hang; Li, Shan; Yan, Zuyong; Wang, Yuehui; Li, Peigang; Wu, Zhenping; Tang, Weihua

doi:10.1088/1674-1056/abe37a

Cited by 12 publications

(5 citation statements)

References 49 publications

(58 reference statements)

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“…The Ti could form Ohmic contact with β -Ga 2 O 3 under a certain condition. [31] The metal electrodes were obtained by depositing Ti (40 nm)/Ag (80 nm) on the surface of sample by vacuum evaporation via a special mask. Each electrode has a size of 1 mm×1 mm and the spacing between adjacent electrodes is 2 mm.…”

Section: Methodsmentioning

confidence: 99%

Effects of preparation parameters on growth and properties of β-Ga₂O₃ film

Chen¹,

Wang²,

Zhang³

et al. 2023

Chinese Phys. B

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The Ga2O3 films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon–oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties (e.g., surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the β-Ga2O3 film are influenced by those parameters. All β-Ga2O3films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The I–V curves show that the Ohmic behavior between metal and β-Ga2O3 films is obtained at 900 °C. Those results will be helpful for the further research of β-Ga2O3 photoelectric semiconductor.

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Section: Methodsmentioning

confidence: 99%

Effects of preparation parameters on growth and properties of β-Ga₂O₃ film

Chen¹,

Wang²,

Zhang³

et al. 2023

Chinese Phys. B

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“…But the production of excellent detectors often needs to overcome some existing problems, such as selecting a suitable device substrate, solving lattice mismatches and avoiding poor film quality due to inconsistent molar ratio with metal ions. To solve these problems, it often requires very complex processes and expensive equipment, such as atomic layer deposition, laser molecular beam epitaxy (LMBE), lateral epitaxy overgrowth, metal-organic chemical vapor deposition, pulsed atomic layer epitaxy, pulsed laser deposition, RF magnetron sputtering and reduced area epitaxy [10,[13][14][15][16][17][18]. The detectors made by these methods are not only complex in technology, but also high in cost and energy.…”

Section: Introductionmentioning

confidence: 99%

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Fang,

Liu,

Zhang

et al. 2024

J. Phys. D: Appl. Phys.

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The detection of ultraviolet (UV) radiation holds significant importance in various fields. As the demand for superior detector performance grows alongside advancements in science and technology, there is a need for detectors with larger light-to-dark rejection ratios and lower standby power consumption. This paper presents the outstanding performance of the rare earth metal oxide Nd2O3 in broadband UV detection. With a wide forbidden band width of 4.6 eV, eliminating the requirement for additional filters, Nd2O3 emerges as an ideal material for broadband UV detectors. The device exhibits remarkable characteristics, including a dark current of only 1.66 × 10−11 A at a 5 V bias voltage, a light-to-dark rejection ratio of 1.33 × 103 at 280 nm and 15 μW cm−2, a responsiveness of 0.061 A W−1, and a detection rate of 4.7 × 1012 Jones. Furthermore, the performance of the device can be significantly enhanced through the formation of a heterojunction with TiO2. The heterojunction device exhibits a shortened response time of 78.64%, a reduced recovery time of 88.97%, and an increased light-to-dark rejection ratio of 2.75 × 103 at a 5 V bias voltage. This significant improvement in performance highlights the potential of the Nd2O3/TiO2 heterojunction in broadband UV detection.

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“…A solar-blind UV photodetector is an optoelectronic device that can selectively detect weak ultraviolet radiation in the deep-UV range (200–280 nm) . Solar-blind photodetectors are widely used for outdoor applications, such as military flame sensors, missile detection systems, electric arc sensing, and environmental and biological research . The materials for constructing UV photodetectors are ultrawide-band gap semiconductors, such as AlGaN, Ga 2 O 3 , and diamond .…”

Section: Introductionmentioning

confidence: 99%

“…The materials for constructing UV photodetectors are ultrawide-band gap semiconductors, such as AlGaN, Ga 2 O 3 , and diamond . Ga 2 O 3 is a promising semiconductor material as it possesses an ultrahigh band gap of 4.2–5.2 eV for photodetectors. , However, the practical application of Ga 2 O 3 is still limited by its defects, such as low conductivity and long response time.…”

Section: Introductionmentioning

confidence: 99%

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Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

et al. 2023

ACS Appl. Nano Mater.

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Ga 2 O 3 is a promising semiconductor for solar-blind (200−280 nm) photodetectors. Two-dimensional (2D) MXenes have been widely applied in the optoelectronic area owing to their high conductivity and large specific surface area. The few-layered Ti 3 C 2 T x (Ti 3 C 2 T x -few) exhibits elevated properties compared with multilayered Ti 3 C 2 T x . Herein, we innovatively adopt a hydrothermal method to prepare Ti 3 C 2 T x -few. A Ga 2 O 3 −Ti 3 C 2 T x 3D network heterojunction is fabricated by van der Waals interaction between one-dimensional (1D) nanowires and 2D nanosheets using the light trapping effect at the interface of the heterostructure. The van der Waals force between Ga 2 O 3 and Ti 3 C 2 T x -few enhances the contact for the transfer of photoelectrons. The optimal Ga 2 O 3 −5Ti 3 C 2 T x exhibits enhanced responsivity (140.57 mA W −1 ), defectivity (4.87 × 10 12 Jones), and external quantum efficiency (68.66%), which are 6.67, 3.20, and 6.68 times higher than that of pure Ga 2 O 3 nanowires under deepultraviolet light (254 nm). The improved properties of Ga 2 O 3 −xTi 3 C 2 T x heterostructure are attributed to the high conductivity of Ti 3 C 2 T x -few, enhanced separation of photogenerated electrons and holes, decreased Schottky barrier height, enlarged depletion region, increased UV light absorption, and enhanced contact via van der Waals force between Ga 2 O 3 and Ti 3 C 2 T x . In conclusion, the Ga 2 O 3 −Ti 3 C 2 T x heterojunction extends the application of Ti 3 C 2 T x -few and provides a new tactic to improve the performance of the Ga 2 O 3 -based photodetector.

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High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film*

Cited by 12 publications

References 49 publications

Effects of preparation parameters on growth and properties of β-Ga₂O₃ film

Effects of preparation parameters on growth and properties of β-Ga₂O₃ film

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

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High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film*

Cited by 12 publications

References 49 publications

Effects of preparation parameters on growth and properties of β-Ga2O3 film

Effects of preparation parameters on growth and properties of β-Ga2O3 film

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd2O3

Ga2O3–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Contact Info

Product

Resources

About

High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film*

Effects of preparation parameters on growth and properties of β-Ga₂O₃ film

Effects of preparation parameters on growth and properties of β-Ga₂O₃ film

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection