2002
DOI: 10.1063/1.1498009
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High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector

Abstract: Articles you may be interested inResonant cavity enhanced In As ∕ In 0.15 Ga 0.85 As dots-in-a-well quantum dot infrared photodetector Effects of Si doping on normal incidence In As ∕ In 0.15 Ga 0.85 As dots-in-well quantum dot infrared photodetectors J. Appl. Phys. 99, 083105 (2006); 10.1063/1.2189973Normal-incidence InAs / In 0.15 Ga 0.85 As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8-12 μm) InAs quantum dot infrared photodetectors with In 0.15 Ga 0.85 As strain-… Show more

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Cited by 145 publications
(101 citation statements)
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“…However the wavelength range covered is usually small and hence is not ideal for the system described above, although in principle different quantum well designs can be adopted to yield the desired spectral characteristics. By incorporating M quantum dots in the quantum wells, dot-in-a-well (DWELL) quantum dot infrared photodetectors (QDIPs) can be designed to exhibit a spectral response that can be tuned across a wide wavelength range [8], [9], as well as providing normal incidence detection. The spectral response of these detectors will vary as a function of the bias voltage applied across the detector allowing one QDIP to effectively act as several separate detectors with differing spectral responses.…”
Section: Introductionmentioning
confidence: 99%
“…However the wavelength range covered is usually small and hence is not ideal for the system described above, although in principle different quantum well designs can be adopted to yield the desired spectral characteristics. By incorporating M quantum dots in the quantum wells, dot-in-a-well (DWELL) quantum dot infrared photodetectors (QDIPs) can be designed to exhibit a spectral response that can be tuned across a wide wavelength range [8], [9], as well as providing normal incidence detection. The spectral response of these detectors will vary as a function of the bias voltage applied across the detector allowing one QDIP to effectively act as several separate detectors with differing spectral responses.…”
Section: Introductionmentioning
confidence: 99%
“…InAs/In 0.15 Ga 0.85 As DWELL systems have been successful in detecting LWIR light [16]. QDIPs using DWELLs not only permit greater control over detection wavelength tunability [87], but they have also demonstrated excellent device performance [88].…”
Section: Qdip Bandstructure Engineeringmentioning
confidence: 99%
“…Later on QDIPs with QW active regions, known as DWELL structures, were proposed to improve the detection wavelength tunability with InGaAs strain relief layers [79,80]. Surprisingly, DWELL IRPDs turned out to have advantages such as enhancement of absorption, low dark current, and high responsivity [81][82][83]. DWELL IRPDs have been extensively explored by Krishna's research group, and some of the main achievements are presented in their review articles [84].…”
Section: Qdip Based On Iii-v Materialsmentioning
confidence: 99%