High responsivity GaN nanowire UVA photodetector synthesized by hydride vapor phase epitaxy

Abstract

A gallium nitride (GaN) nanowire (NW) UVA photodetector with high responsivity was reported. The GaN NW was grown by horizontal hydride vapor phase epitaxy. The NW morphology is proved tunable via different growth conditions. The axial and radial growths of GaN NWs were investigated through vapor–liquid–solid and vapor–solid mixed growth models. Besides, NWs with different morphologies exhibit different growth crystal orientations, which depend on the flow rate of HCl. NWs with smaller diameters show better optical properties and crystalline quality. More importantly, the UVA detector fabricated by a single NW exhibits excellent responsivity of 4.35 × 104–1.06 × 105 A/W and external quantum efficiency of 1.48 × 107%–3.6 × 107% under different light power densities. The high responsivity and low production cost make the GaN NW UVA detector extremely attractive for several applications, such as fire sensing and missile and rocket warning.

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

“…Ultraviolet-A (UVA) photodetectors (PDs) have attracted wide attention in both civilian and military applications, such as flame detection, ultraviolet cameras, and missile early warning systems [1][2][3][4][5][6][7][8][9]. Indium compounds such as In 2 Se 3 , In 2 S 3 and In 2 O 3 are widely reported for efficient photoelectric detection [10][11][12][13][14][15][16][17][18].…”

A broadband self-powered UV photodetector of a β-Ga2O3/γ-CuI p-n junction

“…[1][2][3] In these studies, the accurate detection of UV wavelength is an important research direction. [4][5][6][7][8] In the past few decades, a series of wideband gap semiconductors for UV light detection have been studied, such as GaN [9] for UVA, ZnMgO [10] for UVB, Ga 2 O 3 [11,12] for UVC, and AlN [13] for UVD. Different semiconductor materials have different bandgap widths, which determine their responsiveness at specific UV wavelengths.…”

Detached Vertical (Al,Ga)N Nanowires to Realize the Flexible Ultraviolet Photodetector with High Ultraviolet/Visible Reject Ratio and Detectivity

“…Compared with thin films, nanowires (NWs) have large surface‐to‐volume ratios, which can enhance optical absorption. [ 23,24 ] To obtain high flexibility and maintain high performance under strain and deformation, NWs represent an effective approach. [ 25,26 ] On the other hand, (Al,Ga)N has a series of excellent features, such as nontoxicity, long lifetime, and high stability against UV radiation.…”