High-Responsivity and High-Sensitivity Graphene Dots/a-IGZO Thin-Film Phototransistor

Pei, Zingway; Lai, Hsin‐Cheng; Wang, Yunlong; Chiang, Wei‐Hung; Chen, Chien‐Hsun

doi:10.1109/led.2014.2368773

Cited by 70 publications

(44 citation statements)

References 15 publications

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“…5(a). Photosensitivity (S) or signal-to-noise ratio, which provides the practical figure-of-merit for photodetectors, can be defined as 13,14 S % ð Þ ¼ signal noise…”

Section: (B) and 3(c)mentioning

confidence: 99%

Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap

Kwon

Hong

et al. 2015

Applied Physics Letters

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Conventional A-Si:H phototransistors exhibit poor photosensitivity due to low photo-conversion efficiency. To overcome this intrinsic limit, we introduce gate underlap in A-Si:H phototransistors and demonstrate photosensitivity enhancement. We show that photocurrent can be significantly larger than dark current by 4 orders of magnitude, using 1-lm gate underlap at incident optical power density (P inc) of 3.2 W/cm 2. Our 1-lm gate-underlap phototransistor exhibits higher photosensitivity than the device without gate underlap by 64 times with P inc ¼ 0.2 W/cm 2 and a wavelength of 785 nm. Our gate-underlapped phototransistors also show excellent time-resolved photoswitching behaviors, demonstrating the great potential for highly sensitive photodetectors.

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“…5(a). Photosensitivity (S) or signal-to-noise ratio, which provides the practical figure-of-merit for photodetectors, can be defined as 13,14 S % ð Þ ¼ signal noise…”

Section: (B) and 3(c)mentioning

confidence: 99%

Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap

Kwon

Hong

et al. 2015

Applied Physics Letters

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“…Several successful attempts on visible detection with IGZO/indium zinc oxide (IZO) heterostructure were reported, where the IZO top channel extends the absorption of light up to 450 nm only . Alternative capping layer such as low dimensional graphene, few layers of MoS 2 sheets, or organic films including poly (3‐hexylthiophene) (P3HT) have also been reported . Despite the decent device properties, the use of dispersed nanomaterials may require complex procedures for controlling the areal density/size distribution of the dots and the uniformity of the films over a large scale, and the range of optical response is usually quite limited .…”

Section: Introductionmentioning

confidence: 99%

Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber

Cao

et al. 2017

Adv Elect Materials

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A hybrid phototransistor is developed with solution-processed organolead trihalide perovskite (MAPbI 3 ) capping indium gallium zinc oxide (IGZO), which well fuses the properties of the two materials in sensitive photodetecting and high-mobility charge transporting, respectively. The MAPbI 3capped IGZO phototransistor demonstrates excellent responsivities of over 25 mA W −1 for lights with photon energies above the bandgap of perovskite light absorber. Besides the high sensitivity to light in both ultraviolet and visible regions, hybrid phototransistor maintains a fair on/off ratio of over 10 6 in the dark, and a field effect mobility of 12.9 cm 2 V −1 s −1 . The perovskite light absorber also obviates the long-standing problem for metal oxide phototransistor, the persistent photoconductivity behavior. Furthermore, fast transient response has been achieved by showing rise-time and fall-time within tens of milliseconds. The newly developed device opens variable optic-electric sensing applications for the integrated oxide-perovskite hybrid phototransistors.

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“…Furthermore, we extracted a photosensitivity, which is defined by the ratio of the photocurrent to dark current (Sph = ℎ ) (signal-to-noise ratio). [47][48][49] In the NDT region, ID increases as the applied Pinc increases. This is shown in the plots of Ipeak and Ivalley, which depend on the illumination Pinc (Figure 3g and 3h).…”

Section: Resultsmentioning

confidence: 99%

Tunable Intermediate-Logic Ternary Circuits based on MoSe2-WSe2 Heterojunction

Hong¹,

Park²,

Cho³

et al. 2020

Preprint

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Van der Waals (vdW) heterojunctions, which consist of p-type and n-type semiconductors, have provided new features for transition metal dichalcogenides (TMDs). In this work, a negative differential transconductance (NDT) transistor based on a MoSe2-WSe2 heterojunction (MoSe2-WSe2 H-TR) is proposed. The MoSe2-WSe2 H-TR provides desirable device characteristics for ternary circuit operation with a switching behavior of off-state / p-type turn-on / NDT region / p-type turn-on. As a result, a 100% output voltage (VOUT) swing inverter can be achieved in a ternary inverter, which consists of the proposed MoSe2-WSe2 vdW-H-TR and a MoS2 floating-gate transistor. Furthermore, a tunable intermediate-logic ternary circuit operation is demonstrated by controlling the threshold voltage (VTH) in a pull-down n-type MoS2 floating-gate transistor. We also investigated that a light-induced operation on the MoSe2-WSe2 vdW-H-TR offers control of the VOUT amplitude at the intermediate-logic state. Based on the proposed MoSe2-WSe2 vdW-H-TR, this work suggests a strategy to obtain a tunable ternary circuit, thus providing a new concept of heterojunction electronics using layered TMDs.

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High-Responsivity and High-Sensitivity Graphene Dots/a-IGZO Thin-Film Phototransistor

Cited by 70 publications

References 15 publications

Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap

Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap

Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber

Tunable Intermediate-Logic Ternary Circuits based on MoSe2-WSe2 Heterojunction

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