High responsivity and broadband polarized photodetectors based on InSe/ReSe2 van der Waals heterostructures

Du, Changhui; Gao, Hongjun; Du, Weiting; Li, Jianfei; Leng, Jiancai; Li, Kuilong; Wang, Wenjia

doi:10.1016/j.jallcom.2022.165586

Cited by 16 publications

(15 citation statements)

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“…In turn, the limited intrinsic energy bandgap of ReSe 2 (1.20 eV) and ReS 2 (1.50 eV) restricts their performances in broadband spectrum photodetection. Regarding this, ReX 2 -related vdWs heterostructures have been put forward for expanding their applications in optoelectronic devices . The photodiode based on MoTe 2 /ReS 2 heterostructure shows a broad spectral response up to the near-infrared region of 1310 nm .…”

Section: Introductionmentioning

confidence: 99%

“…Regarding this, ReX 2 -related vdWs heterostructures have been put forward for expanding their applications in optoelectronic devices. 21 The photodiode based on MoTe 2 /ReS 2 heterostructure shows a broad spectral response up to the near-infrared region of 1310 nm. 22 The optoelectronic response of p-n ReSe 2 /MoS 2 diodes at 633 nm light reaches to as high as 6.75 A/W.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast and Polarization-Sensitive ReS₂/ReSe₂ Heterostructure Photodetectors with Ambipolar Photoresponse

Gao

et al. 2022

ACS Appl. Mater. Interfaces

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Recently, two-dimensional (2D) van der Waals (vdWs) heterostructures provided excellent and fascinating platforms for advanced engineering in high-performance optoelectronic devices. Herein, novel ReS2/ReSe2 heterojunction phototransistors are constructed and explored systematically that display high responsivity, wavelength-dependent ambipolar photoresponse (negative and positive), ultrafast and polarization-sensitive detection capability. This photodetector exhibits a positive photoresponse from UV to visible spectrum (760 nm) with high photoresponsivities about 126.56 and 16.24 A/W under 350 and 638 nm light illumination, respectively, with a negative photoresponse over 760 nm, which is mainly ascribed to the ambipolar photoresponse modulated by gate voltage. In addition, profound linear polarization sensitivity is demonstrated with a dichroic ratio of about ∼1.2 at 638 nm and up to ∼2.0 at 980 nm, primarily owing to the wavelength-dependent absorption anisotropy and the stagger alignment of the crystal. Beyond static photodetection, the dynamic photoresponse of this vdWs device presents an ultrafast and repeatable photoswitching performance with a cutoff frequency (f 3dB) exceeding 100 kHz. Overall, this study reveals the great potential of 2D ReX2-based vdWs heterostructures for high-performance, ultrafast, and polarization-sensitive broadband photodetectors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrafast and Polarization-Sensitive ReS₂/ReSe₂ Heterostructure Photodetectors with Ambipolar Photoresponse

Gao

et al. 2022

ACS Appl. Mater. Interfaces

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“…Curves in Fig. 1 represent the results of the I-V characteristics approximation by formula (1). The fitting parameters are given in Table . 1.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the resistance of InSe to radiation expands the scope of its use. The use of indium selenide as a base material allows to create various electronic components such as photodetectors [1,2], solar cells [3,4], Van der Waals heterojunctions [5,6] and other.…”

Section: Introductionmentioning

confidence: 99%

Photosensitive CuFeO2/n-InSe Heterojunctions

Tkachuk¹,

Orletskii²,

Ivanov³

et al. 2022

J. Nano- Electron. Phys.

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Photosensitive anisotypic CuFeO2/n-InSe heterojunctions were fabricated by the method of lowtemperature spray pyrolysis. An aqueous solution of copper dichloride CuCl2•2H2O and iron trichloride FeCl3•6H2O was sprayed onto the InSe substrate heated to 623 K. As a result, p-type CuFeO2 films with a thickness of ~ 0.3 m and a band gap of 2.6 eV were obtained. Contacts were formed using silver-based conductive paste. The I-V characteristics were studied at temperatures from 295 to 336 K. It was shown that the temperature dependence of the height of the potential barrier is linear. Based on the analysis of the temperature dependences of forward and reverse I-V characteristics, the dynamics of change of energy parameters was established and the role of energy states at the boundary of the heterojunction in the formation of the contact potential difference was clarified. The approximation of I-V characteristics was carried out within the framework of the model, which takes into account the influence of series and shunt resistances. The values of the diode coefficient, series and shunt resistances of the heterojunction were found. The mechanisms of formation of direct and reverse currents through the CuFeO2/n-InSe energy barrier were determined. The spectral dependence of the quantum efficiency of heterojunctions in the range of photon energies from 1.2 to 3.2 eV was studied. The effect of light absorption in heterostructure materials on its general photosensitivity was analyzed. The obtained results confirmed the promise of CuFeO2/n-InSe heterojunctions for photoelectronics.

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“…Many photodetectors based on the structure of vertical heterojunctions can solve this problem [ 26 ]. The InSe/ReSe 2 heterojunction photodetector was studied by Du et al and the response speed was 0.36/0.39 ms [ 27 ]. However, the photodetection range of ReSe 2 -based vertical heterojunction photodetectors is mostly concentrated in the visible (VIS) to near-infrared band [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure

et al. 2022

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Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe2/MoTe2 heterojunction, the rectification ratio (RR) of ~102 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 1011 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.

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High responsivity and broadband polarized photodetectors based on InSe/ReSe2 van der Waals heterostructures

Cited by 16 publications

References 50 publications

Ultrafast and Polarization-Sensitive ReS₂/ReSe₂ Heterostructure Photodetectors with Ambipolar Photoresponse

Ultrafast and Polarization-Sensitive ReS₂/ReSe₂ Heterostructure Photodetectors with Ambipolar Photoresponse

Photosensitive CuFeO2/n-InSe Heterojunctions

Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure

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High responsivity and broadband polarized photodetectors based on InSe/ReSe2 van der Waals heterostructures

Cited by 16 publications

References 50 publications

Ultrafast and Polarization-Sensitive ReS2/ReSe2 Heterostructure Photodetectors with Ambipolar Photoresponse

Ultrafast and Polarization-Sensitive ReS2/ReSe2 Heterostructure Photodetectors with Ambipolar Photoresponse

Photosensitive CuFeO2/n-InSe Heterojunctions

Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure

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Ultrafast and Polarization-Sensitive ReS₂/ReSe₂ Heterostructure Photodetectors with Ambipolar Photoresponse

Ultrafast and Polarization-Sensitive ReS₂/ReSe₂ Heterostructure Photodetectors with Ambipolar Photoresponse