High responsivity AlGaN-based UV sensors for operation in harsh conditions

Mello, Marcio M.; Scarascia, A.; Guido, Stefano; Altamura, Davide; Tasco, V.; Vittorio, Massimo De; Passaseo, A.

doi:10.1109/icsens.2008.4716753

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…realizing the practical use of PDs, further improvements toward a high sensitivity, a fast response and recovery, a high spectral selectivity, and operation in harsh environments, especially at high temperatures, are urgently required [6,7]. One-dimensional (1D) semiconducting heterostructures [8][9][10][11] are considered the most promising sensitive photodetection materials because they offer not only the high photoconductive gain and property benefits of 1D nanostructures (rich surface trap states and large surface-to-volume ratio) but also the added benefit of multifunctions or new properties arising from the synergistic effects of combining heterojunction materials.…”

Section: Introductionmentioning

confidence: 99%

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires

et al. 2015

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High-performance solar-blind UV (ultraviolet) photodetectors (PDs) based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle stability, and the ability to operate in harsh environments are critical for solar observations, space communication, UV astronomy, and missile tracking. In this study, TiO 2 -ZnTiO 3 heterojunction nanowire-based PDs are successfully developed and used to detect solar-blind UV light. A photoconductive analysis indicates that the fabricated PDs are sensitive to UV illumination, with high sensitivity, good stability, and high reproducibility. Further analysis indicates that the rich existence of grain boundaries within the TiO 2 -ZnTiO 3 nanowire can greatly decrease the dark current and recombination of the electron-hole pairs and thereby significantly increase the device's photosensitivity, spectra responsivity (1.1 × 10 6 ), and external quantum efficiency (4.3 × 10 8 %). Moreover, the PDs exhibit good photodetective performance with fast photoresponse and recovery and excellent thermal stability at temperatures as high as 175 °C . According to these results, TiO 2 -ZnTiO 3 heterojunction nanowires exhibit great potential for applications in high-performance optical electronics and PDs, particularly next-generation photodetectors with the ability to operate in harsh environments.

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Section: Introductionmentioning

confidence: 99%

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires

et al. 2015

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“…High responsivity values are observed by other scientists. 31,32,33 In addition, Wu et al ascribed the high responsivity to the trapping effects. 34 Information on the depth dependent distribution of electrically active defects was obtained from the fact that the penetration depth of light varies as a function of the wavelength for a semiconductor with above-bandgap illumination.…”

Section: Resultsmentioning

confidence: 99%

Analysis of Point Defect Distributions in AlGaN/GaN Heterostructures via Spectroscopic Photo Current-Voltage Measurements

Ozden

Khanal

Youn

et al. 2016

ECS J. Solid State Sci. Technol.

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Raman spectroscopy, photoluminescence (PL), and spectroscopic photo current-voltage measurements were performed to characterize point defects at surface/interface and bulk in AlGaN/GaN high electron mobility transistors (HEMTs) wafer. Raman spectroscopy displayed that two samples have similar crystalline quality and stress. PL measurements revealed that samples possessed strong near band edge peak at around 3.42 eV and broad blue luminescence. No yellow luminescence band was observed. The spectroscopic photo current-voltage (I-V) measurements with sub-bandgap illumination exhibited the existence of sub-bandgap defects with different activation energies for each sample. The depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (I-V) (DR-UV-SPIV) measurements revealed that the depth dependent distribution of the defects for these samples are different. It was demonstrated that even though electrically active defects for two devices on the same pieces of AlGaN/GaN HEMTs heterostructures cannot be distinguished in Raman spectroscopy and PL measurements, they can be differentiated by using the spectroscopic photo I-V with sub-bandgap illumination and DR-UV-SPIV measurements. It was concluded that DR-UV-SPIV and spectroscopic photo I-V measurements with sub-bandgap illumination can be used to assess the uniformity of in-depth and spectral distribution of sub-bandgap point defects across the AlGaN/GaN wafers, respectively.

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“…These devices find wide-ranging applications in recent electronic industries in the field of environmental surveillance, astronomical inspection, UV detection, dynamic encryption, trajectory tracing, gesture recognition, bioimaging, and communications [1][2][3][4]. More advancements in high sensitivity, quick response and recovery, high spectral selectivity and tough environment operation particularly at high temperatures are desperately needed to realize the practical application of photodetectors [5,6]. Excellent light-sensitive materials provide the foundation for photodetectors' exceptional detecting capabilities.…”

Section: Introductionmentioning

confidence: 99%

A theoretical analysis to reveal the prospects of MoS₂ as a back surface field layer in TiS₃-based near infrared photodetector

Miah,

Ebon,

Abir

et al. 2024

Eng. Res. Express

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In this article, a photodetector based on TiS3 absorber material, featuring a narrow direct bandgap of 1 eV, has been simulated. Throughout this research, the J-V (current-voltage) curves and spectral responses have been explored by systematically varying the thickness, doping concentration, and defect density of specific layers. The JSC (short circuit current) and VOC (open circuit voltage) of the heterostructure photodetector are found to be 45.77 mA/cm2 and 0.693 V respectively. Also, the responsivity (R) and detectivity (D*) are 0.81 A/W and 2.19×1014 Jones at a light wavelength of 1100 nm. The spectral response exhibits significantly elevated values within the wavelength range of 800 nm to 1200 nm, indicating the device's ability to detect light in the near-infrared (NIR) region effectively. The novel research offers valuable insights, emphasizing the material's suitability for photodetector (PD) applications and signaling a promising direction for further research interest in photodetector development.

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High responsivity AlGaN-based UV sensors for operation in harsh conditions

Cited by 5 publications

References 11 publications

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires

Analysis of Point Defect Distributions in AlGaN/GaN Heterostructures via Spectroscopic Photo Current-Voltage Measurements

A theoretical analysis to reveal the prospects of MoS₂ as a back surface field layer in TiS₃-based near infrared photodetector

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High responsivity AlGaN-based UV sensors for operation in harsh conditions

Cited by 5 publications

References 11 publications

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires

Analysis of Point Defect Distributions in AlGaN/GaN Heterostructures via Spectroscopic Photo Current-Voltage Measurements

A theoretical analysis to reveal the prospects of MoS2 as a back surface field layer in TiS3-based near infrared photodetector

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A theoretical analysis to reveal the prospects of MoS₂ as a back surface field layer in TiS₃-based near infrared photodetector