2006
DOI: 10.1016/j.susc.2005.10.034
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High resolution XPS study of the large-band-gap semiconductor stibnite (Sb2S3): Structural contributions and surface reconstruction

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Cited by 132 publications
(83 citation statements)
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(84 reference statements)
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“…It has been suggested [14] that the network structure of amorphous germanium disulfide resembles layered structure of a-GeS 2 , composed of GeS 4 tetrahedra [15]. On the other hand crystalline Sb 2 S 3 (stibnite) has a complex structure consisting of infinite quasi-linear Sb 4 S 6 ribbons with two types of Sb atoms [16]. Each atom has a distinctly different bonding arrangements, i.e., slightly distorted trigonal pyramid or tetragonal pyramid [16].…”
Section: Discussionmentioning
confidence: 99%
“…It has been suggested [14] that the network structure of amorphous germanium disulfide resembles layered structure of a-GeS 2 , composed of GeS 4 tetrahedra [15]. On the other hand crystalline Sb 2 S 3 (stibnite) has a complex structure consisting of infinite quasi-linear Sb 4 S 6 ribbons with two types of Sb atoms [16]. Each atom has a distinctly different bonding arrangements, i.e., slightly distorted trigonal pyramid or tetragonal pyramid [16].…”
Section: Discussionmentioning
confidence: 99%
“…Notably, the peak relative to the O 1s excitation was nearly undetectable for the Sb2S3 film annealed at 450 ºC, and the binding energy of the Sb 3d5/2 peak showed a slightly negative shift (approximately 0.2 eV) compared with that of the Sb2S3 film without annealing. This negative shift of Sb 3d5/2 peak might be attributed to the decreased adsorption of oxygen on the surface of the Sb2S3 films [24][25][26]. Meanwhile, the S 2p spectra of all the Sb2S3 films were also deconvoluted as shown in Fig.…”
Section: Structural Analysismentioning
confidence: 99%
“…The Sb 3d5/2 spectra were further deconvoluted into two peaks, of which the peak located at approximately 532 eV was assigned to the O 1s excitation [23]. The existence of oxygen on the surface of the films probably derived from the surface contamination [24]. Notably, the peak relative to the O 1s excitation was nearly undetectable for the Sb2S3 film annealed at 450 ºC, and the binding energy of the Sb 3d5/2 peak showed a slightly negative shift (approximately 0.2 eV) compared with that of the Sb2S3 film without annealing.…”
Section: Structural Analysismentioning
confidence: 99%
“…The XPS data in Figs. 3(a) and (b) reveal that Sb peaks (3d 5/2 : 530.1 eV, 3d 3/2 : 539.5 eV) and S peaks (2p 3/2 : 162.1 eV, 2p 1/2 : 163.2 eV) of Sb 2 S 3 phase has been evidently observed [30]. As shown in Fig.…”
Section: Resultsmentioning
confidence: 74%