High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

Faleev, N. N.; Chaldyshev, V. V.; Kunitsyn, A. E.; Tret’yakov, V. V.; Preobrazhenskii, V. V.; Putyato, М. А.; Semyagin, B. R.

doi:10.1134/1.1187352

Cited by 12 publications

(10 citation statements)

References 5 publications

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“…The excess arsenic concentration was determined from the shift of the diffraction peak of the AlGaAsSb film due to the annealing [10][11][12]. According to the X ray dif fraction analysis, the concentration of arsenic point defects in LT AlGaAs(Sb) was 7.6 × 10 19 cm -3 .…”

Section: Samples and Experimental Techniquementioning

confidence: 99%

Fröhlich resonance in the AsSb/AlGaAs system

et al. 2014

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The optical absorption in a metal-semiconductor metamaterial based on the AlGaAs matrix has been investigated. The key feature of this material is the presence of random arrays of metallic AsSb nanoin clusions modifying its dielectric properties. It has been shown that the presence of such arrays in the material leads to resonance absorption of light by surface plasmons in AsSb nanoinclusions in the incident photon energy range from 1.37 to 1.77 eV. The experimental spectrum of the extinction coefficient at an energy of 1.48 eV exhibits a resonance peak with the half width equal to 0.18 eV. The extinction coefficient for AsSb nanoinclusions in the AlGaAs matrix has been calculated in terms of the Mie theory. The calculated spectrum of the extinction coefficient also includes a resonance peak with the energy and half width equal to 1.48 and 0.18 eV, respectively. The calculated plasma energy for free standing nanoinclusions in vacuum is 7.38 eV.

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Section: Samples and Experimental Techniquementioning

confidence: 99%

Fröhlich resonance in the AsSb/AlGaAs system

et al. 2014

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“…805 is 20% lower. Such behavior of μ H is due to partial smearing of the InGaAs/InAs heterointerface and an increase in the degree of roughness of the heterointerface [30]. Thus, to attain the best mobility of electrons in the CQW, it is necessary to improve the morphological properties of nanoinserts and to control the degree of smoothness of the interface at the atomic level.…”

Section: Resultsmentioning

confidence: 99%

Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

et al. 2012

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The paper is concerned with the theoretical and experimental studies of the band structure and electrical properties of InAlAs/InGaAs/InAlAs/InP heterostructures containing a composite InGaAs quan tum well with InAs and GaAs nanoinserts. From the Shubnikov-de Haas effect, the effective cyclotron mass is determined experimentally and calculated with consideration for the nonparabolicity of the electron energy spectrum. An approach to estimation of the effective mass is proposed and tested. The approach is based on weighted averaging of the of the composite quantum well's constituent materials. A first pro posed heterostructure containing two InAs inserts symmetrically arranged in the quantum well makes a 26% reduction in compared to in the lattice matched In 0.53 Ga 0.47 As quantum well possible.

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“…[1][2][3][4][5] The x-ray rocking curve technique, which is a form of HRXRD, measures the sample reflecting power as a function of the angle between the sample surface and the incident x-ray beam and provides information on layer thickness, composition, and strain for epitaxial layers. When applied to simple structures such as a single heterolayer consisting of three or less elemental constituents on a known substrate, the thickness, composition and strain of the overlayer can be obtained with great accuracy simply by using basic formulations of Bragg's law.…”

Section: High-resolution X-ray and Transmission Electron Microscopic mentioning

confidence: 99%

High-resolution x-ray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure

Gray

Newell

Lester

et al. 1999

Journal of Applied Physics

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Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxyEnhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP High-resolution x-ray diffractometry ͑HRXRD͒ and transmission electron microscopy ͑TEM͒ are employed to characterize a quaternary III x III 1Ϫx V y V 1Ϫy AlGaAsSb/GaInAsSb multiple quantum well ͑MQW͒ heterostructure. A method for uniquely determining the chemical composition of the strained quaternary quantum well, information previously thought to be unattainable using HRXRD, is thoroughly described. The misconception that HRXRD can separately find the well and barrier thickness of a MQW from the pendellosung fringe spacing is corrected and, thus, the need for TEM is motivated. Computer simulations show that the key in finding the well composition is the intensity of the higher order satellite peaks in the diffraction pattern. For the AlGaAsSb/InGaAsSb MQWs analyzed in this work, the variation in the intensity of the third-order satellite peak is identified as a sensitive measure of the quantum well composition. Using HRXRD on an MQW semiconductor laser device layer, the ability to resolve this higher order peak and interpret the information contained in it is demonstrated for the first time.

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High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

Cited by 12 publications

References 5 publications

Fröhlich resonance in the AsSb/AlGaAs system

Fröhlich resonance in the AsSb/AlGaAs system

Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

High-resolution x-ray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure

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