High‐Resolution Scanning Probe Nanolithography of 2D Materials: Novel Nanostructures

Rani, Ekta; Wong, Lu Shin

doi:10.1002/admt.201900181

Cited by 19 publications

(15 citation statements)

References 103 publications

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“… 34 , 183 Additionally, emerging methods such as multiplexed scanning probe lithography may in future be viable at the manufacturing scale. 184 − 186 Indeed, this type of lithography has already been demonstrated at the 3 in. wafer scale, and could in future offer a route to low-cost “desktop fabrication” that is compatible with soft materials and biomolecules.…”

Section: Conclusion and Future Perspectivesmentioning

confidence: 89%

Lithographic Processes for the Scalable Fabrication of Micro- and Nanostructures for Biochips and Biosensors

2021

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Since the early 2000s, extensive research has been performed to address numerous challenges in biochip and biosensor fabrication in order to use them for various biomedical applications. These biochips and biosensor devices either integrate biological elements (e.g., DNA, proteins or cells) in the fabrication processes or experience post fabrication of biofunctionalization for different downstream applications, including sensing, diagnostics, drug screening, and therapy. Scalable lithographic techniques that are well established in the semiconductor industry are now being harnessed for large-scale production of such devices, with additional development to meet the demand of precise deposition of various biological elements on device substrates with retained biological activities and precisely specified topography. In this review, the lithographic methods that are capable of large-scale and mass fabrication of biochips and biosensors will be discussed. In particular, those allowing patterning of large areas from 10 cm 2 to m 2 , maintaining cost effectiveness, high throughput (>100 cm 2 h –1 ), high resolution (from micrometer down to nanometer scale), accuracy, and reproducibility. This review will compare various fabrication technologies and comment on their resolution limit and throughput, and how they can be related to the device performance, including sensitivity, detection limit, reproducibility, and robustness.

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Section: Conclusion and Future Perspectivesmentioning

confidence: 89%

Lithographic Processes for the Scalable Fabrication of Micro- and Nanostructures for Biochips and Biosensors

2021

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“…[420,421] Aside from oxidation, other mechanisms can also be employed, such as thermal reduction or other chemical reactions. [424,425] Figure 8c-ii shows MoS 2 grid patterns with dimensions ranging from 200 nm to 1 µm, reflecting a high degree of dimensional flexibility. In addition, SPL patterning of BP (Figure 8c-iii) has been achieved, [421] where transistors formed by patterned BP flakes exhibited enhanced current on-off ratios compared to pristine devices.…”

Section: Other Patterning Techniquesmentioning

confidence: 99%

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Jia

Zhang

et al. 2022

Small Methods

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The carrier mobilities of all the listed materials are experimental results except for those of SnSe, MoO 3 , MoSSe, WSSe, and graphdiyne that are theoretical calculated values; b) The n, k values for all the listed materials are at 1550 nm except for BP at 800 nm and h-BN at 1200 nm; c) The NLO parameters of PdSe 2 , PtSe 2 , BP, h-BN, MoO 3 , and CsPbBr 3 are at 800 nm. Those of MoS 2 and Bi 2 Te 3 are at 1060 nm. Those of other materials are at 1550 nm. In addition to third-order optical nonlinearity, strong second-order optical nonlinearity has been observed for graphene, GO, MoS 2 , WSe 2 , PdSe 2 , and h-BN, with typical χ (2) values varying from 10 -12 -10 -7 m V -1 . [33,[116][117][118][119][120] ; d) The values of n 2 and β are dependent on the film thickness, here we only provide typical values obtained from experimental measurements.

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“…It is a straightforward approach to customize graphene to a few nanometers with well‐defined structure and predesigned crystallographic orientation. [ 255–257 ] For instance, Tapasztó et al. [ 258 ] tailored graphene into GNRs and bent junctions via SPL.…”

Section: Transfer Of Graphene Nanostructuresmentioning

confidence: 99%

Recent Progress in the Transfer of Graphene Films and Nanostructures

Gao

Chen

et al. 2021

Small Methods

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electronics, [9] photonics, [10,11] biosensors, [12,13] etc.One reason that graphene research has developed so fast is the relatively simple and cheap production procedures. Many production approaches have been established, such as top-down approaches, including: mechanical exfoliation, [14] liquid phase exfoliation, [15] reduction of graphene oxide (GO), [16] and electrochemical exfoliation, [17] etc.; as well as bottomup approaches, including: epitaxial growth on SiC, [18] chemical vapor deposition (CVD), [19] etc. Among these approaches, CVD on metal substrates has been widely used to synthesize high quality, large-area graphene (LAG) films. The production of square meters of graphene has been realized, and the state of art devices have been demonstrated. [20] CVD graphene films are ready for applications like transparent conductive films, [20,21] wearable transparent sensors, [22] and ionic/molecular nanofiltration membrane. [23] Despite graphene's extraordinary electronic properties and fast progress in production, zero bandgap of graphene hinders the application of graphene as an electronic transistor. [24] One solution is to engineer graphene into graphene nanostructures (GNs), e.g., graphene nanoribbons (GNRs), [25] graphene nanomeshes (GNMs), [26] graphene quantum dots (GQDs), [27] and other complex shaped nanostructures. [28] Theory predicted that GNRs' bandgap (ΔE(W)) varies as a function of the ribbon width W, ΔE(W) = α W −1 , α is a coefficient with unit [nm eV]. [29][30][31][32] Contrary to the fixed bandgap of a semiconductor-silicon, the bandgap of GNs can be precisely tuned by regulating their edge structure, shape, size, and crystallographic orientation. [26,[33][34][35] Currently, extremely small and dense graphene based-nanoelectronic devices have been achieved by top-down approaches, e.g., electron-beam lithography, [36] block copolymer lithography, [37] and nanosphere lithography. [38] However, top-down patterning of graphene to nanometer scale is challenging without compromising its transport properties. As the pattern density increases, the introduced edge disorders will gradually dominate the electronic properties. Bottom-up approaches, on the other hand, provide an opportunity to synthesize graphene with well-defined edges via solution-mediated or surface-assisted cyclodehydrogenation reactions. [39,40] Since CVD-grown graphene films and surface-assisted grown GNs are generally synthesized on metal foils, their further applications require post-transfer to target substrates. [12,[41][42][43] The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly u...

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High‐Resolution Scanning Probe Nanolithography of 2D Materials: Novel Nanostructures

Cited by 19 publications

References 103 publications

Lithographic Processes for the Scalable Fabrication of Micro- and Nanostructures for Biochips and Biosensors

Lithographic Processes for the Scalable Fabrication of Micro- and Nanostructures for Biochips and Biosensors

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Recent Progress in the Transfer of Graphene Films and Nanostructures

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