2006
DOI: 10.1016/j.sna.2006.02.019
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High-resolution pressure sensor for photo acoustic gas detection

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Cited by 14 publications
(14 citation statements)
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“…Additionally, more companies have since developed their own solutions based on similar principles. With the emergence of microsystems technology, efforts have begun to miniaturize the URAS setup [47][48][49]. To this end, simulations of the sensitivity function of standard NDIR and photoacoustic NDIR underscore the potential for miniaturization [50] and experimental data does support this [51].…”
Section: Indirect Photoacoustic (Ndir Setups)mentioning
confidence: 99%
“…Additionally, more companies have since developed their own solutions based on similar principles. With the emergence of microsystems technology, efforts have begun to miniaturize the URAS setup [47][48][49]. To this end, simulations of the sensitivity function of standard NDIR and photoacoustic NDIR underscore the potential for miniaturization [50] and experimental data does support this [51].…”
Section: Indirect Photoacoustic (Ndir Setups)mentioning
confidence: 99%
“…As a result, the exposition to harsh environments or the need for non-standard manufacturing processes is limited to a minimum. Earlier studies with pressure or sound transducers directly encapsulated in the gas-filled cell, either needed to use non-standard low-temperature encapsulation processes in gas bias atmospheres individually manufactured samples or harsh process environments [25][26][27][28][29].…”
Section: Discussionmentioning
confidence: 99%
“…Macroscopic sensor systems have also been implemented [12], [13]. In the recently finished, EU-funded NetGas project [12], the partners have been focusing on several components of the PA gas measurement system, including the IR emitter [14], the pressure sensor [15], and the thermopile for long-term drift monitoring [16]. In this paper, the performance of a photoacoustic sensor system using the components [14]- [16] is evaluated.…”
Section: Photoacoustic Operating Principlementioning
confidence: 99%
“…The middle silicon wafer had a patented, sensitive, bossed membrane with implanted piezoresistors in a Wheatstone bridge configuration [17]. The sensitivity of the pressure sensor was measured as the output voltage per bridge voltage and pressure, and was 10 V/V Pa [15]. Details on the fabrication and measurement of the pressure sensor element can be found in [15].…”
Section: Sensor Manufacturingmentioning
confidence: 99%