High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers

Kornitzer, K.; Grehl, M; Thonke, Klaus; Sauer, R.; Kirchner, C.; Schwegler, V.; Kamp, M.; Leszczyński, M.; Grzegory, I.; Porowski, S.

doi:10.1016/s0921-4526(99)00408-1

Cited by 20 publications

(11 citation statements)

References 9 publications

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“…1b), demonstrates that the same electronic states are involved in the SPL spectra of compressively strained layers and in the PL spectra of strain-free layers. Such a conclusion rules out previous interpretations of homoepitaxial PL spectra, that identified some of the recombination peaks between I 2 and X A as NDBEs related to the B valence band [10,11] or to excitons bound to donor complexes in different structural environments [11].…”

Section: Methodssupporting

confidence: 53%

“…Excited States of the Neutral Donor Bound Exciton The PL spectra of homoepitaxial layers display a narrow NDBE recombination line I 20 , followed at higher energy by four well defined peaks [9,10] attributed to the NDBE excited states (I 2i , i = a, c, d and e) [9]. Unfortunately, the broadening of the emission lines generally prevents the direct observation of the NDBE excited states on the PL spectra of the heterostructures.…”

Section: Methodsmentioning

confidence: 99%

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Donor and Donor Bound Exciton Spectroscopy in Wurtzite GaN Heterostructures

Teisseire

Neu

Morhain

2001

phys. stat. sol. (b)

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Neutral donor bound excitons (I 2 ) and donor related electronic Raman scattering (ERS) in wurtzite GaN epilayers deposited onto Si, 6H-SiC, Al 2 O 3 and GaN substrates are studied at low temperature by high-resolution selective photoluminescence spectroscopy (SPL). Due to the presence of a large strain distribution in the heterostructures, the observation of the I 2 excited states under selective laser excitation is possible from tensile to compressive strain along the [0001] direction. It is shown that the I 2 spectra strongly depend on which valence band (A or B) the bound exciton hole belongs to. Resonant ERS and resonantly excited two-electron spectra reveal that two main different residual donor species are present both in MBE and MOCVD epitaxial samples. The donor binding energies are shown to vary noticeably with the biaxial strain field.

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Section: Methodssupporting

confidence: 53%

Section: Methodsmentioning

confidence: 99%

Donor and Donor Bound Exciton Spectroscopy in Wurtzite GaN Heterostructures

Teisseire

Neu

Morhain

2001

phys. stat. sol. (b)

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“…The bound B exciton was previously observed in high-quality homoepitaxial GaN films between the free and donor bound A excitons. 41,46 The biexcitons having slightly smaller binding energy 47 of ϳ5.7 meV could also contribute to the -PL spectra at high excitation power.…”

Section: B Power-dependent -Pl Measurementsmentioning

confidence: 99%

Polarized microphotoluminescence and reflectance spectroscopy of GaN with k perpendicular to c: Strongly π-polarized line near theAexciton

et al. 2002

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Polarized microphotoluminescence ͑-PL͒ and reflectivity studies of thick wurtzite GaN grown by hydride vapor phase epitaxy on c sapphire are performed with the light vector k both normal to the c axis ͑kЌc͒ and parallel to it. A strong PL peak is found in the vicinity of the A exciton in polarization ͑kЌc, E parallel to the c axis͒, in apparent contradiction to the selection rules. The -polarized component exceeds in intensity the -polarized one up to ϳ50 K. Power-and temperature-dependent measurements of both no-phonon and longitudinal optical phonon-assisted ͑monitoring the real density of exciton states͒ -PL reveal the complex nature of the -polarized PL line near the A exciton. At low temperatures the -component involves a bound B exciton contribution, while at higher temperatures contributions of scattered A exciton states become appreciable. The enhancement of the -polarized component is attributed to the complex structure of the excitonpolariton branches for kЌc. Temperature-dependent -PL and reflectance spectroscopies reveal additionally a difference in the optical properties between the sample regions at the top surface and the cleaved edges, tentatively explained as induced by different strains in these regions.

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“…1͒ and metalorganic chemical-vapor deposition ͑MOCVD͒ ͑Refs. 2-5͒ on bulk GaN single crystals prepared by a highpressure, high-temperature method [1][2][3][4] and on quasibulk GaN grown on sapphire by hydride vapor-phase epitaxy ͑HVPE͒ and then separated by laser lift-off. 5 The obtained highquality layers allowed observation of numerous sharp excitonic features in the photoluminescence ͑PL͒ spectrum.…”

mentioning

confidence: 99%

“…A peak at 3.4673 eV is attributed to the A-exciton bound to an unidentified shallow acceptor (A 0 ,X A nϭ1 ). 4 The most intense peaks at 3.4720 and 3.4728 eV are attributed to the A-exciton bound to two neutral shallow donors, D 1 and D 2 :…”

mentioning

confidence: 99%

Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template

Reshchikov

Huang

Yun

et al. 2001

Applied Physics Letters

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Photoluminescence (PL) studies were performed on a 1.5-μm-thick GaN layer grown by molecular-beam epitaxy on a freestanding GaN template that in turn was grown by hydride vapor-phase epitaxy. PL spectra from both the epilayer and the substrate contain a plethora of sharp peaks related to excitonic transitions. We identified the main peaks in the PL spectrum. Taking advantage of the observation of donor bound exciton peaks and their associated two-electron satellites, we have determined the binding energies of two distinct shallow donors (28.8 and 32.6 meV), which are attributed to Si and O, respectively.

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High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers

Cited by 20 publications

References 9 publications

Donor and Donor Bound Exciton Spectroscopy in Wurtzite GaN Heterostructures

Donor and Donor Bound Exciton Spectroscopy in Wurtzite GaN Heterostructures

Polarized microphotoluminescence and reflectance spectroscopy of GaN with k perpendicular to c: Strongly π-polarized line near theAexciton

Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template

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