1987
DOI: 10.1149/1.2100566
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High Resolution Photoelectrochemical Etching of n ‐ GaAs with the Scanning Electrochemical and Tunneling Microscope

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Cited by 86 publications
(21 citation statements)
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“…The idea to use the UME of an SECM for local surface modification has been documented since the beginning of the SECM development 138143. The current development status has been documented in several review articles 16.…”
Section: Secm As a Tool For Microstructuringmentioning
confidence: 99%
“…The idea to use the UME of an SECM for local surface modification has been documented since the beginning of the SECM development 138143. The current development status has been documented in several review articles 16.…”
Section: Secm As a Tool For Microstructuringmentioning
confidence: 99%
“…[138][139][140][141][142][143] Der Entwicklungsstand wurde mehrfach in Übersichtsartikeln dargelegt. [16,[144][145][146][147] Die SECM-Methode erlaubt chemisch vielfälti-ge und definierte Modifikationen von Oberflächen, die mit anderen Verfahren oft nicht zugänglich sind.…”
Section: Secm Als Mikrostrukturierungswerkzeugunclassified
“…The direct mode of SECM provides an alternative method for the local deposition of sol-gel structures. This mode was first developed by Bard et al, 20 yet, relatively few studies were reported using this method. [21][22][23] In most of these works the substrate is used as the working electrode and the tip as the auxiliary.…”
Section: Communicationmentioning
confidence: 99%