High resolution, low energy electron detector

Abstract

Electron detection at low energy range for scanning electron microscope (SEM), electron capture detector and electron probe micro-analysis (EPMA) applications, require detectors with high sensitivity and accuracy for low energy range. Such detectors must therefore have a thin entrance window and low recombination at the Si-SiO 2 interface. An electron detector with 100% photons to electron-hole pair production rate having a 10 nm SiO 2 passivating layer reveals a responsivity of approximately 0.25 A/W when irradiated. Simulations results showing the responsivity of electron interaction between detectors of varied interface fixed oxide charge density Q f show that there is an appreciable difference with the responsivity of a p + n detector and that of an n + p. The simulation results also show the significance of the effect of the minority carriers transport velocity S n,p on the responsivity of the detector.

Gridded duo‐lateral position sensitivity detector with high linearity to low energetic electrons in vacuum environment

“…The Fig. 7 Relationship between electron energy and the responsivity of the PSD The measurement was conducted using a Faraday cup and the responsivity calculated with reference to the detector dark current and the incident electron beam current [29] difference between two adjacent datatips in Fig. 10a represents the length of grid spacing.…”

“…7, it can also be seen that the minimum energy at which the PSD can detect electrons is about 0.5 keV with responsivity of 0.13 A/W. It should be noted that the theoretical maximum responsivity that can be achieved for electron and UV photodetectors is known to be 0.277 A/W [29–30].…”