High-resolution line and space pattern fabrication by electron beam lithography using NEB-22 resist

Okada, Makoto; Matsui, Shinji

doi:10.7567/jjap.54.118004

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…[1][2][3][4][5] The fidelity of transferred patterns is often examined through scanning electron microscope (SEM) imaging. 6,7 Feature boundaries in SEM images are determined, from which metrics such as critical dimension (CD) and line edge roughness (LER) are computed. As the feature size continues to decrease, it has become even more important to be able to measure the CD and LER accurately from SEM images.…”

Section: Introductionmentioning

confidence: 99%

Noise filtering for accurate measurement of line edge roughness and critical dimension from SEM images

Guo

Lee

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Measurements of the line edge roughness (LER) and critical dimension (CD) from scanning electron microscope (SEM) images are often required for analyzing circuit patterns transferred onto substrate systems. A common approach is to employ image processing techniques to detect feature boundaries from which the LER and CD are computed. SEM images usually contain a significant level of noise which affects the accuracy of measured LER and CD. This requires reducing the noise level by a certain type of low-pass filter before detecting feature boundaries. However, a low-pass filter also tends to destroy the boundary detail. Therefore, a careful selection of low-pass filter is necessary in order to achieve the high accuracy of LER and CD measurements. In this paper, a practical method to design a Gaussian filter for reducing the noise level in SEM images is proposed. The method utilizes the information extracted from a given SEM image in adaptively determining the sharpness and size of a Gaussian filter. The results from analyzing the effectiveness of the Gaussian filter designed by the proposed method are provided. V

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Section: Introductionmentioning

confidence: 99%

Noise filtering for accurate measurement of line edge roughness and critical dimension from SEM images

Guo

Lee

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The production of nanostructures with periodicities on the order of 100 nm over macroscale areas is challenging using common patterning techniques. Serial writing methods, such as electron-beam lithography, are time-consuming for dense features and require writing rates on the order of 10 days/cm 2 for 100 nm pitch structures using typical electron-beam conditions. , Interference lithography can pattern wafer-scale areas in a single step but involves specialized setups to produce periodicities below 200 nm . For example, a 157 nm laser interferometer carefully aligned with a vacuum UV grade sapphire prism and a high-index immersion liquid can generate resist gratings with 44 nm periodicity .…”

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confidence: 99%

Sequential Feature-Density Doubling for Ultraviolet Plasmonics

Knudson

Hryn

Huntington

et al. 2017

ACS Appl. Mater. Interfaces

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Patterning of nanostructures with sub-200 nm periodicities over cm-scale areas is challenging using standard approaches. This paper demonstrates a scalable technique for feature-density doubling that can generate nanopatterned lines with periodicities down to 100 nm covering >3 cm. We developed a process based on controlled wet overetching of atomic-layer deposited alumina to tune feature sizes of alumina masks down to several nm. These features transferred into silicon served as masters for template-stripping aluminum nanogratings with three different periodicities. The aluminum nanogratings supported surface plasmon polariton modes at ultraviolet wavelengths that, in agreement with calculations, depended on periodicity and incident excitation angle.

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Fabrication of Thickness‐Controllable Micropatterned Polyelectrolyte‐Film/Nanoparticle Surfaces by Using the Plasma Oxidation Method

Zhu

Zhang

et al. 2016

Chemistry An Asian Journal

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We have demonstrated a novel way to form thickness-controllable polyelectrolyte-film/nanoparticle patterns by using a plasma etching technique to form, first, a patterned self-assembled monolayer surface, followed by layer-by-layer assembly of polyelectrolyte-films/nanoparticles. Octadecyltrimethoxysilane (ODS) and (3-aminopropyl)triethoxysilane (APTES) self-assembled monolayers (SAMs) were used for polyelectrolyte-film and nanoparticle patterning, respectively. The resolution of the proposed patterning method can easily reach approximately 2.5 μm. The height of the groove structure was tunable from approximately 2.5 to 150 nm. The suspended lipid membrane across the grooves was fabricated by incubating the patterned polyelectrolyte groove arrays in solutions of 1,2-dioleoyl-sn-glycero-3-phosphocholine (DOPC) giant unilamellar vesicles (GUVs). The method demonstrated here reveals a new path to create patterned 2D or 3D structures.

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High-resolution line and space pattern fabrication by electron beam lithography using NEB-22 resist

Cited by 5 publications

References 15 publications

Noise filtering for accurate measurement of line edge roughness and critical dimension from SEM images

Noise filtering for accurate measurement of line edge roughness and critical dimension from SEM images

Sequential Feature-Density Doubling for Ultraviolet Plasmonics

Fabrication of Thickness‐Controllable Micropatterned Polyelectrolyte‐Film/Nanoparticle Surfaces by Using the Plasma Oxidation Method

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