High Resolution Investigation of the Rod-Shaped Scattering from a (111) Si Surface by a Synchrotron Radiation Source

Kashiwagura, Nobuo; Kashihara, Yasuharu; Sakata, Makoto; Harada, J.; Wilkins, S. W.; Stevenson, Andrew W.

doi:10.1143/jjap.26.l2026

Cited by 19 publications

(8 citation statements)

References 6 publications

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“…Interfaces 2020, 7,1901772 can be found in various sources. [35] The coefficients are obtained by the evaluation of Equation (5) with ( )  ρ r determined by quantum mechanical calculations of the atomic wavefunction.…”

Section: Atomic Form Factormentioning

confidence: 99%

“…Among the most studied systems were the Si (111) and Ge (111) surfaces. [4][5][6][7][8] Also, simple metal surfaces (such as various terminations of Au, Ag, Pt, and Cu) as well as compound metal surfaces (including Cu 3 Au and NiAl) were examined in detail in order to experimentally test elastic, chemical, and thermodynamic models of surface structures.…”

Section: Metal and Semiconductor Surfacesmentioning

confidence: 99%

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High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

Disa

Walker

Ahn

2020

Adv Materials Inter

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In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk of a crystal are contained in the intensity and position of Bragg peaks in X‐ray diffraction, CTRs carry detailed information about the atomic structure at the interface. Developments in synchrotron X‐ray sources, instrumentation, and analysis procedures have made CTR measurements into extremely powerful tools to study atomic reconstructions and relaxations occurring in a wide variety of interfacial systems, with relevance to chemical and electronic functionalities. In this review, an overview of the use of CTRs in the study of atomic structure at interfaces is provided. The basic theory, measurement, and analysis of CTRs are covered and applications from the literature are highlighted. Illustrative examples include studies of complex oxide thin films and multilayers.

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Section: Atomic Form Factormentioning

confidence: 99%

Section: Metal and Semiconductor Surfacesmentioning

confidence: 99%

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

Disa

Walker

Ahn

2020

Adv Materials Inter

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“…For characterization of atomic scale structures of surfaces and interface, surface-science-type characterization techniques have recently made great progress which include high-resolution x-ray photoelectron spectroscopy ͑XPS͒, 7 scanning tunneling microscopy ͑STM͒/atomic force microscopy ͑AFM͒, 8,9 grazing angle x-ray diffraction ͑XRD͒, 10 crystal truncation rod ͑CTR͒ scattering, 11 Fourier transform infrared-absorption spectroscopy ͑FTIR͒, 3,12 etc.…”

Section: Introductionmentioning

confidence: 99%

Contactless capacitance–voltage and photoluminescence characterization of ultrathin oxide–silicon interfaces formed on hydrogen terminated (111) surfaces

Hashizume¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Electronic properties of the interfaces between Si and ultrathin ͑Շ10 Å͒ oxides formed by various low-temperature processes were characterized in contactless fashion, using contactless capacitancevoltage and photoluminescence surface state spectroscopy techniques together with x-ray photoelectron spectroscopy measurement. Hydrogen ͑H͒ terminated Si͑111͒ surfaces were used as the initial surface. Ultrathin oxides were formed at low temperatures by chemical oxidation processes ͑hot HNO 3 , H 2 SO 4 ϩH 2 O 2 ͒, long-time air exposure, and low-temperature oxidation processes below 350°C. The initial H-terminated surfaces showed presence of Fermi-level pinning at E 0 ϭE V ϩ0.65 eV due to high density of amphoteric discrete state probably originating from Si dangling bonds. On the other hand, all the ultrathin oxide-Si interfaces exhibited very limited capacitance variations with voltage at low capacitance levels similar to GaAs metal-insulatorsemiconductor systems, and indicated that the Fermi level is pinned near the hybrid orbital charge neutrality level E HO due to presence of interface states with narrow U-shaped continuous distributions. Low-temperature oxidation at 350°C slightly weakens such pinning. The present work indicates difficulty of realizing unpinned ultrathin oxide-silicon interface by low-temperature processes.

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“…1). This CTR scan is also a powerful tool to help solve interface structures on the atomic scale, for example, the structures of NiSi2/Si (111) (Robinson, Tung & Feidenhans'l, 1988), Si/Si (111) (Robinson, Waskiewicz, Tung & Bohr, 1986) and SiO2/Si (111) (Kashiwagura et al, 1987). Aside from the crystal structure determination, GIXD together with in situ experimental techniques also provides a means of studying surface order--disorder, melting and roughening transitions (Mochrie, Zehner, Ocko & Gibbs, 1990;Held, Jordan-Sweet, Horn, Mak & Feldman, 1989;Dosch, Mailander, Reichert, Peisl & Johnson, 1991;Liang, Sirota, D'Amico, Hughes & Sinha, 1987).…”

Section: Introductionmentioning

confidence: 99%

Dynamical approach for X-ray diffraction from surfaces and interfaces: interpretation of crystal truncation rod using dynamical theory

Gau¹,

Chang²

1995

Acta Cryst Sect A

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X-ray diffraction from crystal surfaces and interfaces is described within the framework of the dynamical theory. The intensity distributions of specular and non-specular crystal truncation rods are interpreted with this dynamical approach. Difficulties encountered in the ordinary dynamical calculation for these rods are mentioned and the details of the numerical calculation procedure which overcomes the difficulties are given. The coordinates of dispersion surface, linear absorption coefficients and mode excitations of surface diffractions are calculated and the validity of this dynamical approach is discussed.

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High Resolution Investigation of the Rod-Shaped Scattering from a (111) Si Surface by a Synchrotron Radiation Source

Cited by 19 publications

References 6 publications

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

Contactless capacitance–voltage and photoluminescence characterization of ultrathin oxide–silicon interfaces formed on hydrogen terminated (111) surfaces

Dynamical approach for X-ray diffraction from surfaces and interfaces: interpretation of crystal truncation rod using dynamical theory

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