2013
DOI: 10.1016/j.mee.2013.03.055
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High resolution HSQ nanopillar arrays with low energy electron beam lithography

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Cited by 30 publications
(30 citation statements)
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“…These nanostructures are fabricated in a topdown approach, where a single layer of negative-tone resist, namely hydrogen silsesquioxane (HSQ), is patterned by electron-beam lithography. 30 Subsequent reactive ion etching in the H = 90 nm Si overlayer of silicon on insulator (SOI) substrates defines the structures. The remaining HSQ-layer on the top of the structures induces an additional SiO 2 capping of approximately 20nm.…”
Section: Sample Preparationmentioning
confidence: 99%
“…These nanostructures are fabricated in a topdown approach, where a single layer of negative-tone resist, namely hydrogen silsesquioxane (HSQ), is patterned by electron-beam lithography. 30 Subsequent reactive ion etching in the H = 90 nm Si overlayer of silicon on insulator (SOI) substrates defines the structures. The remaining HSQ-layer on the top of the structures induces an additional SiO 2 capping of approximately 20nm.…”
Section: Sample Preparationmentioning
confidence: 99%
“…Conventional methods for obtaining periodical nanostructured arrays are lithographic techniques including laser lithography, [ 26,27 ] electron-beam lithography, [28][29][30] X-ray lithography, [ 31 ] atomic force microscope lithography, [ 32 ] scanning tunneling microscopy technology, [ 33 ] and so on. However, these techniques can not be afforded to most laboratories because of their high processing costs and lower production effi ciency.…”
mentioning
confidence: 99%
“…After exposure, HSQ was developed by immersion in 25% tetramethylammonium hydroxide (TMAH) for one minute. 44 HSQ patterns were subsequently transferred to the silicon substrate down to the buried oxide by anisotropic reactive ion etching (RIE). Then, the structures were embedded in a 200 nm thick HSQ layer, deposited by spin coating in order to perfectly planarize the sample in a nanometrical range.…”
Section: A Nanofabrication Of Planar Si Structuresmentioning
confidence: 99%