can be easily printed on a large-scale, thus expanding their potential applications to flexible displays, wearable electronics, energy storage, flexible sensors, etc. [6][7][8][9] Carbon nanotube, [10] graphene, ultrathin metal nanowires, and 1D inorganic semiconductor nano/microstructures [11,12] are commonly used for printable electronics. Especially, acting as the functional components, 1D inorganic semiconductors have great superiorities to construct flexible and wearable electronic devices, such as photodetectors, [13][14][15] transistors, [16] pressure sensors, [17,18] and gas/chemical sensors. [19] However, a second operation such as transfer from the growth substrate is always needed to assemble the flexible devices, thus possibly damages the nano/microwires and results in a performance degradation. In addition, the nano/ microwires prepared by conventional chemical vapor deposition or solution processes are usually not quite uniform in morphology and electronic properties, causing device performance variation, and limiting their practical applications.To improve the performance and reproducibility of flexible devices, a reliable technology to achieve the direct-printing of aligned 1D inorganic semiconductor arrays in a large scale is highly desired. Near-field electrospinning [20][21][22][23] is one of the most efficient technologies to print 1D inorganic semiconductor nano/microwires, which opens up a significant prospect to implement position-controllable deposition and precise manipulation in the level of individual nano/microscale wire. [3,24,25] Based on the aligned near-field electrospun nano/ microwires, various electronic devices including photodetectors and transistors have been fabricated. [26][27][28][29] However, there still lacks of systematic investigations on the controllable preparation of patterned nano/microwires and their applications in printed electronic devices with tunable performances.In this article, using a home-made near-field direct-printing system, we successfully printed patterned Zn 2 GeO 4 semiconductor microwires (SMWs) arrays and fabricated high performance ultraviolet photodetectors on both rigid and flexible substrates. Through this facile method, we could efficiently manipulate the printed number of SMWs, printed arrays, and patterns. Meanwhile, the photoresponse performance of photodetectors could be tuned by the printed numbers of SWMs. In addition, we have also designed the integrated photodetector arrays to indicate a potential application in newfangled printed imaging sensors. This work proves a feasible design of future Printed electronics have drawn considerable attention due to their unique features and broad applications in future portable and wearable electronic devices. Herein, a near-field direct-printing method is used to realize a precise manipulation of microwires in the level of the individual wire for depositioning in a desired position and direction. High-performance flexible photodetectors are fabricated on printed aligned Zn 2 GeO 4 microwires arra...