High-resolution dual-comb gas-phase spectroscopy with a mode-locked laser on a photonic chip

Chen, Z.; Gasse, Kasper Van; Vicentini, Edoardo; Huh, Jeong Hyun; Poelman, Stijn; Wang, Z.; Roelkens, Günther; Hänsch, Theodor W.; Kuyken, Bart; Picqué, N.

doi:10.1364/cleo_at.2020.jth4a.8

Conference on Lasers and Electro-Optics 2020

DOI: 10.1364/cleo_at.2020.jth4a.8

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High-resolution dual-comb gas-phase spectroscopy with a mode-locked laser on a photonic chip

Z. Chen

Kasper Van Gasse

Edoardo Vicentini

et al.

Abstract: An integrated III-V-on-silicon mode-locked laser enables the first on-chip comb generator of 1.0-GHz line-spacing for direct interrogation of gas-phase narrow rovibrational transitions in molecules. Its flat-top spectrum empowers real-time multiplexed spectroscopy without any scanning elements.

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Cited by 2 publications

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High-pulse-energy III-V-on-silicon-nitride mode-locked laser

et al. 2021

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Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked lasers, their on-chip integration is desired. In recent years, there have been multiple demonstrations of monolithic III-V and heterogeneous III-V-on-silicon mode-locked lasers. However, the pulse energy, noise performance, and stability of these mode-locked lasers are limited by the relatively high linear and nonlinear waveguide loss, and the high temperature sensitivity of said platforms. Here, we demonstrate a heterogeneous III-V-on-silicon-nitride (III-V-on-SiN) electrically pumped mode-locked laser. SiN’s low waveguide loss, negligible two-photon absorption at telecom wavelengths, and small thermo-optic coefficient enable low-noise mode-locked lasers with high pulse energies and excellent temperature stability. Our mode-locked laser emits at a wavelength of 1.6 μm, has a pulse repetition rate of 3 GHz, a high on-chip pulse energy of ≈2 pJ, a narrow RF linewidth of 400 Hz, and an optical linewidth <1 MHz. The SiN photonic circuits are fabricated on 200 mm silicon wafers in a CMOS pilot line and include an amorphous silicon waveguide layer for efficient coupling from the SiN to the III-V waveguide. The III-V integration is done by micro-transfer-printing, a technique that enables the transfer of thin-film devices in a massively parallel manner on a wafer scale.

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High-pulse-energy III-V-on-silicon-nitride mode-locked laser

et al. 2021

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On-chip optical comb sources

2022

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On-chip integration of optical comb sources is crucial in enabling their widespread use. Integrated photonic devices that can be mass-manufactured in semiconductor processing facilities offer a solution for the realization of miniaturized, robust, low-cost, and energy-efficient comb sources. Here, we review the state of the art in on-chip comb sources, their applications, and anticipated developments.

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High-resolution dual-comb gas-phase spectroscopy with a mode-locked laser on a photonic chip

Cited by 2 publications

References 7 publications

High-pulse-energy III-V-on-silicon-nitride mode-locked laser

High-pulse-energy III-V-on-silicon-nitride mode-locked laser

On-chip optical comb sources

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