High-resolution characterization of the forbidden Si 200 and Si 222 reflections

Zaumseil, P.

doi:10.1107/s1600576715004732

Cited by 210 publications

(87 citation statements)

References 15 publications

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“…Films deposited from 0.1 mol/L solutions and inserted directly into a preheated furnace at 700°C for 1 hour were crystalline, but deposition of additional layers (at the same conditions) showed non‐oriented crystalline peaks (Figure B, Pattern (iv)). We note all of these patterns were recorded with the sample stage rotated in‐plane to a φ value that does not satisfy any potential Si multiple diffraction conditions that appear near 2 θ ≈ 32°, which could complicate peak identification for the most intense BTO powder peak, (101), that appears near the same location …”

Section: Resultsmentioning

confidence: 99%

“…We note all of these patterns were recorded with the sample stage rotated in-plane to a φ value that does not satisfy any potential Si multiple diffraction conditions that appear near 2θ ≈ 32°, which could complicate peak identification for the most intense BTO powder peak, (101), that appears near the same location. 34 In order to further confirm epitaxial orientation, out-ofplane (2θ/ω) and in-plane (2θχ/φ) diffraction patterns for a 5-layer (~85 nm) BTO film were recorded ( Figure 3A,B, respectively). The out-of-plane pattern was taken with the diffractometer equipped with a Ge double-crystal monochromator to eliminate Si(004) CuK β and W L-α peaks, as well as to decrease the width of the main CuK α peak, both of which could obfuscate film peaks.…”

Section: Resultsmentioning

confidence: 99%

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Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition

et al. 2019

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Recent progress in the integration of BaTiO3 thin films with silicon has shown great promise for the development of on‐chip photonic devices. However, the highest performing thin films in the literature are deposited by costly and/or complex vacuum techniques. In this study, epitaxial BaTiO3 thin films are deposited on thin SrTiO3 template layers on Si(001) from an alkoxide‐based chemical solution under atmospheric conditions and yield an effective Pockels coefficient of 27 ± 4 pm/V for an ~85 nm film. Film crystallinity, microstructure, and defect nature are examined by X‐ray diffraction and high‐resolution transmission and scanning electron microscopy techniques and discussed within the context of the growth method as well as the observed electro‐optical response.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition

et al. 2019

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“…Thin films for TEM observations are prepared by mechanical polishing, dimpling and Ar + ion beam thinning. [27]. No preferential crystalline orientation is detected.…”

Section: Transmission Electron Microscopy (Tem)mentioning

confidence: 91%

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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Abstract:The physical properties including the mechanical, optical and electrical properties of Ti nitrides and silicides are very attractive for many applications such as protective coatings, barriers of diffusion, interconnects and so on. The simultaneous formation of nitrides and silicides in Ti films improves their electrical properties. Ti films coated on Si wafers are heated at various temperatures and processed in expanding microwave (Ar-N 2 -H 2 ) plasma for various treatment durations. The Ti-Si interface is the centre of Si diffusion into the Ti lattice and the formation of various Ti silicides, while the Ti surface is the centre of N diffusion into the Ti film and the formation of Ti nitrides. The growth of silicides and nitrides gives rise to two competing processes which are thermodynamically and kinetically controlled. The effect of thickness on the kinetics of the formation of silicides is identified. The metastable C 49 TiSi 2 phase is the main precursor of the stable C 54 TiSi 2 phase, which crystallizes at about 600 • C, while TiN crystallizes at about 800 • C.

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“…The curve of NiSi 2 was measured ex situ after the heat treatment up to 860 °C with an optimized parallel beam (PB) configuration of the diffractometer to avoid any influence of the nearby located Si (002) reflection as suggested in Ref. .…”

Section: Resultsmentioning

confidence: 99%

Fast in situ X‐ray analysis of Ni silicide formation

Zaumseil

Wolansky

2017

Physica Status Solidi (b)

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Metal silicides are the preferred contact materials for metal‐oxide semiconductor (MOS) structures. With further technology development, the materials changed within the last decades toward lower resistivity and lower thermal budget. Currently NiSi partly further stabilized with Pt or Pd is the material of choice. The understanding of phase transformation processes and structural features is of great importance for production process optimization. Here we present a fast laboratory‐based in situ X‐ray diffraction method with two different experimental arrangements (Bragg–Brentano and grazing incidence) optimized concerning the materials texture. Its application is demonstrated for the transformation of Ni to different Ni silicide phases starting with a 46 nm thick Ni layer sputtered on a Si(001) substrate and covered with TiN. Activation energies for the Ni to Ni2Si (1.55 ± 0.13) eV and the Ni2Si to NiSi transition (1.30 ± 0.15) eV are measured by repeating fast diffraction scans over a limited angular range under isothermal conditions and analyzing the diffraction peak height versus time.

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High-resolution characterization of the forbidden Si 200 and Si 222 reflections

Cited by 210 publications

References 15 publications

Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition

Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

Fast in situ X‐ray analysis of Ni silicide formation

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