High‐resolution AMLCD made with a‐Si:H TFTs and an Al gate and IZO structure

Abstract

Abstract— Using a low‐cost a‐Si:H‐TFT process with an Al gate and IZO last structure, a direct‐view active‐matrix display with the highest information content has been fabricated in a phase‐2 mass production line at DTI Himeji. The display, a 16.3‐in.‐diagonal 200‐ppi QSXGA (quad SXGA) incorporates 7680 columns and 2048 rows. Each subpixel measures 42 μm (H) × 126 μm (V).

Substitution of transparent conducting oxide thin films for indium tin oxide transparent electrode applications

“…As evidenced from X-ray diffraction (XRD) analyses, ZnO-In 2 O 3 films with indium contents in the range from approximately 40 to 90 at.% were amorphous. Recently, amorphous Zn-In-O (indium-zinc-oxide, or IZO) thin films with an indium content of about 90 at.% are in practical use for organic light-emitting diodes (OLEDs) and LCDs [20]. Although the minimum resistivity of ZnO-In 2 O 3 films seen in Figs.…”

Liquid Crystals: A Unique Phase of Matter

“…Nonetheless, α-Si active-matrix displays have been made in all sizes and are most popular as laptop monitors and other large-area LCDs. Current research issues include the reduction of the number of photomasks required for fabrication [Kim et al (2000); Chen et al (2000)], the increase of display resolution [Kinoshita et al (1999)], and the increase of the aperture ratio [Nakabu et al (1999)]. TFTs with a much higher electron mobility (∼440 cm 2 /V/s) can be produced where process temperatures (450-600 • C) are significantly higher [Oshima (1994); Ibaraki (1999)].…”

Current manufacturing technologies for TFT‐LCDs

“…In Table 1, current five to seven mask processes used for notebook-PC and monitor applications are summarized. [1][2][3][4] Many companies use their own unique choices of materials and processes depending on their application and display quality. For notebook PCs, a chromium single layer may be adequate for gate and data bus lines.…”

“…According to the Fresnel-Kirchhoff theory, the wave equation at point p of the double-slit photolithography is given by (1) where e ikr is the phase factor and dA is the element of area over a closed surface. When b is the slit width, h is the distance between two slits, and k is the wave number, the distribution of the exposed light intensity at point p is given by (2) where β = kb sin Θ/2 and γ = kh sin Θ/2. Figure 3 shows the typical Fraunhofer diffraction pattern generated by the double-slit diffraction.…”

“…Actually, it was reported that IZO was used as an interconnection material between gate AlNd and data metal. 2 We think that this is because the zinc (-0.76 V) in IZO is more difficult to reduce than the tin (0.15 V) in ITO in view of the standard reduction potential. 15 Furthermore, if the S/D metal is dry etchable, the series of S/D metal etching, the a-Si etching, the photoresist etch-back, the second S/D metal etching, and the last resist ashing processes can be done in a dry-etch chamber all at the same time.…”