High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

“…Due to a lattice mismatch of 7.96%, the Al 0.9 Ga 0.1 As 0.06 Sb 0.94 epilayer grown on the GaAs(001) substrate is compressively strained and will start relaxing beyond its critical thickness of a few monolayers. We expect this to leave an array of periodic dislocations at the interface, similar to what is shown for AlSb grown on GaAs(001) substrate [25] (8.54%…”

“…However, Vaughan et al [25] reported that the threading dislocation density for AlSb epilayer grown on GaAs(001), albeit large near the interface, reduces significantly as the AlSb growth progresses. Raisin et al [26] found that after 25 nm of GaSb growth on GaAs, 99% of the lattice mismatch strain had relaxed.…”

Maintien thérapeutique à deux ans de l’abatacept en pratique courante. Résultats de la cohorte française de l’étude ACTION

“…Since the affinity of AlSb and Al9Co2 with oxygen has been already studied and established, this layer could be an appropriate protective layer able to keep oxygen, avoiding its diffusion throughout the substrate [27][28][29][30]. Indeed, Shibata et al have shown that AlSb is extremely liable to be oxidized during an exposition in air at high temperature.…”