High repetition rate, tunable, Q-switched diode pumped Tm:YLF laser

Gorajek, Lukasz; Jabczyński, Jan Karol; Żendzian, Waldemar; Kwiatkowski, Jacek; Jelı́nková, Helena; Šulc, Jan; Němec, Michal

doi:10.2478/s11772-009-0011-1

Cited by 12 publications

(8 citation statements)

References 51 publications

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“…In contrast to -NaYF4, Czochralski-grown crystals of lanthanide-doped LiYF4 are commercially available from various suppliers and widely used as solid state laser materials. Well-known examples are LiYF4:Pr [13][14][15][16][17][18][19][20], LiYF4:Nd [21][22][23][24][25][26][27][28][29], LiYF4:Yb [30][31][32][33][34][35], LiYF4:Er [36][37][38][39][40][41][42][43], LiYF4:Ho [44][45][46][47][48][49][50] and LiYF4:Tm [51][52][53][54][55][56]. LiYF4 laser crystals are grown under strict exclusion of water and humidity to avoid the incorporation of OH − into the fluoride lattice which is a well-known luminescence quencher owing to its highfrequency vibrational modes [57,58].…”

Section: Introductionmentioning

confidence: 99%

LiYF4:Yb/LiYF4 and LiYF4:Yb,Er/LiYF4 core/shell nanocrystals with luminescence decay times similar to YLF laser crystals and the upconversion quantum yield of the Yb,Er doped nanocrystals

et al. 2020

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We developed a procedure to prepare luminescent LiYF4:Yb/LiYF4 and LiYF4:Yb,Er/LiYF4 core/shell nanocrystals with a size of approximately 40 nm revealing luminescence decay times of the dopant ions that approach those of high-quality laser crystals of LiYF4:Yb (Yb:YLF) and LiYF4:Yb,Er (Yb,Er:YLF) with identical doping concentrations. As the luminescence decay times of Yb3+ and Er3+ are known to be very sensitive to the presence of quenchers, the long decay times of the core/shell nanocrystals indicate a very low number of defects in the core particles and at the core/shell interfaces. This improvement in the performance was achieved by introducing two important modifications in the commonly used oleic acid based synthesis. First, the shell was prepared via a newly developed method characterized by a very low nucleation rate for particles of pure LiYF4 shell material. Second, anhydrous acetates were used as precursors and additional drying steps were applied to reduce the incorporation of OH− in the crystal lattice, known to quench the emission of Yb3+ ions. Excitation power density (P)-dependent absolute measurements of the upconversion luminescence quantum yield (ΦUC) of LiYF4:Yb,Er/LiYF4 core/shell particles reveal a maximum value of 1.25% at P of 180 Wcm−2. Although lower than the values reported for NaYF4:18%Yb,2%Er core/shell nanocrystals with comparable sizes, these ΦUC values are the highest reported so far for LiYF4:18%Yb,2%Er/LiYF4 nanocrystals without additional dopants. Further improvements may nevertheless be possible by optimizing the dopant concentrations in the LiYF4 nanocrystals.

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Section: Introductionmentioning

confidence: 99%

LiYF4:Yb/LiYF4 and LiYF4:Yb,Er/LiYF4 core/shell nanocrystals with luminescence decay times similar to YLF laser crystals and the upconversion quantum yield of the Yb,Er doped nanocrystals

et al. 2020

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“…For LRF and LIDAR, a larger pulse energy increases the maximum operating range, and a shorter pulse duration improves the range resolution. Due to the efficiency advantage offered by the cross relaxation process which yields two excited-state ions for each pump photon [4], Tm-doped crystal hosts [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] are the favored solid-state laser gain materials for generation of emission near 2 µm. Compared to other Tm-doped crystals, Tm:YLF offers the significant advantage of a very low thermo-optic coefficient, reducing the effect of thermal lensing that can cause significant changes in the laser output characteristics with pump power.…”

Section: Introductionmentioning

confidence: 99%

“…Both active and passive Q-switching (PQS) Tm:YLF and Tm:YAP lasers have been explored [8][9][10][11][12][13][14][15][16]. A maximum pulse energy of 10.5 mJ, with 22 ns pulse duration, was generated using an acousto-optic-modulator (AOM) Q-switched Tm:YLF laser operating at a pulse repetition frequency (PRF) of 10 Hz [8]. A simpler Q-switching technique based on a vibrating mirror has been also been successfully used with Tm:YAP lasers [9].…”

Section: Introductionmentioning

confidence: 99%

Experimental and Modeled Output Characteristics of a Compact, Passively Q-Switched Tm:YLF Laser

Chinn¹,

Goldberg

King

et al. 2023

IEEE J. Quantum Electron.

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We measure the output characteristics of a compact, laser diode end-pumped Tm:YLF laser, operated in continuous wave (CW) mode, or passively Q-switched (PQS) using various Cr 2+ :ZnS saturable absorbers. A numerical Finite-Difference Beam Propagation Method (FD-BPM) is developed and used to model the laser CW and pulsed performance. Good agreement between the experiment and simulated output is demonstrated. The 39 mm-long laser resonator utilizes a 20.2 mm-long Tm:YLF crystal, a 1908 nm volume Bragg grating (VBG) reflector to restrict the emission wavelength, and an intra-cavity negative lens to reduce the energy fluence in the saturable absorber. A laser utilizing a Cr 2+ :ZnS saturable absorber with 91.9% unsaturated transmission generates 9.8 mJ PQS pulses with 8.7 ns full-widthhalf-maximum (FWHM) pulse duration. Maximum average output powers of 6.1 W and 6.5 W are generated in PQS and CW operation, respectively.

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“…[12−14] Compared with other crystals, the Tm:YLF crystal exhibits many advantages, such as natural birefringence, low tendency to thermal lensing due to the negative thermo-optic coefficient and long upper-state life time (>15 ms). [15,16] Moreover, the Tm:YLF crystal can be efficiently pumped by commercial laser diodes conducted by the AlGaAs-based diode pumping technology at 793 nm, which is beneficial for high-power output in Tm:YLF laser systems.…”

mentioning

confidence: 99%

Silicon Wafer: a Direct Output Coupler in Tm:YLF Laser

Ren

et al. 2016

Chinese Phys. Lett.

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We present a high power diode-pumped continuous-wave Tm:YLF (Tm 3+ -doped lithium yttrium fluoride) laser with a piece of silicon wafer as the output coupler (Si-OC laser) directly. Under the pump power of 40 W at 793 nm, a maximum output power of 12.1 W is obtained with a beam quality of 𝑀 2 ≤ 1.55 at 1887 nm, corresponding to an optical-to-optical efficiency of 30.25% and a slope efficiency of 33.21%. To the best of our knowledge, this is the first report on directly utilizing silicon as an output coupler (Si-OC) in the solid Tm:YLF laser system. Due to the intriguing characteristics of silicon, such as negligible absorption in the wavelength region around 2 𝜇m, high damage threshold, low cost and long-pass filter properties, double-side polished monocrystalline silicon wafer is considered as an outstanding candidate output coupler in the high-power laser system 2 𝜇m spectral region, which may dramatically reduce the total manufacturing costs of the 2 𝜇m laser system.

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High repetition rate, tunable, Q-switched diode pumped Tm:YLF laser

Cited by 12 publications

References 51 publications

LiYF4:Yb/LiYF4 and LiYF4:Yb,Er/LiYF4 core/shell nanocrystals with luminescence decay times similar to YLF laser crystals and the upconversion quantum yield of the Yb,Er doped nanocrystals

LiYF4:Yb/LiYF4 and LiYF4:Yb,Er/LiYF4 core/shell nanocrystals with luminescence decay times similar to YLF laser crystals and the upconversion quantum yield of the Yb,Er doped nanocrystals

Experimental and Modeled Output Characteristics of a Compact, Passively Q-Switched Tm:YLF Laser

Silicon Wafer: a Direct Output Coupler in Tm:YLF Laser

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