High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn–Ta metal-sintered target

Muto, Yu; Nakatomi, Satoshi; Oka, Nobuto; Iwabuchi, Yoshinori; Kotsubo, Hidefumi; Shigesato, Yuzo

doi:10.1016/j.tsf.2011.10.061

Cited by 40 publications

(29 citation statements)

References 25 publications

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“…For ATO and TTO, resistivities achieved by sputter‐deposition are relatively high. The number of studies available on TTO films is very limited (), much smaller than for ATO. Sputter‐deposited ATO films have generally been found to have comparatively small electron mobilities .…”

Section: State Of Researchmentioning

confidence: 99%

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Weidner

Jia

Shigesato

et al. 2016

Physica Status Solidi (b)

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SnO2 films doped with antimony or tantalum were sputter‐deposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter‐deposited tantalum‐doped films with lower than previously achieved resistivity 5.4×10−4 Ω normalcm, carrier density 4.5×1020 cm−3, and mobility 25.7cm2thinmathspaceVs−1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co‐doped thin films were synthesized for the first time, achieving similar results. Comparison of resistivity values achievable by doping sputter‐deposited tin oxide films with antimony (blue) or tantalum (red) as a function of dopant concentration.

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Section: State Of Researchmentioning

confidence: 99%

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Weidner

Jia

Shigesato

et al. 2016

Physica Status Solidi (b)

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“…The sample was prepared using high purity rutile SnO 2 powder (Sigma-Aldrich, purity better than 99.99 %), pressed in a circular pellet of 5 mm diameter at 3x10 8 The TDPAC spectrometer used was based on four BaF 2 scintillating detectors in a 90° coplanar arrangement and an electronic coincidence set-up with slow-fast logic.…”

Section: B Sample Preparation and Tdpac Measurementsmentioning

confidence: 99%

Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (¹¹¹In → )¹¹¹Cd-Doped SnO₂ Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon

et al. 2018

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In this paper we investigate the effect of Cd doping at ultra-low concentrations in SnO 2 both experimentally, by measuring the temperature dependence of the electric quadrupole hyperfine interactions with time-differential perturbed angular correlation (TDPAC) spectroscopy using 111 Cd as probe nuclei, and theoretically, by performing first-principles calculations based on the density functional theory. TDPAC spectra were successfully analyzed with a time-dependent on-off model for the perturbation factor. These results show combined dynamic plus static interactions whose electricfield gradients were associated in this model to different stable electronic configurations close to the Cd atoms. The dynamic regime is then originated in fast fluctuations between these different electronic configurations. First-principles calculations results show that the Cd impurity introduces a double acceptor level in the top of the valence band of the doped semiconductor and produces isotropic outward relaxations of the nearest oxygen neighbors. The variation of the calculated electric-field gradient tensor as a function of the charge state of the Cd impurity level shows an interesting behavior that explains the experimental results, giving strong support from first-principles to the electron-capture after-effects proposed scenario. The electron-capture decay of the parent 111 In to 111 Cd as well as the double acceptor character of the 111 Cd impurity and the electric nature of the host are shown to contribute to the existence of these type of time-dependent hyperfine interactions.

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“…The XRD peaks from the (110), (101) Figure 1 shows the electrical resistivity q, Hall mobility l, and carrier density n of the polycrystalline ATO and TTO films as a function of the reactive gas flow ratio 25 deposited by magnetron sputtering. In this study, we investigated the thermal diffusivity of films under conditions near those that provided the lowest resistivity.…”

Section: A Structurementioning

confidence: 99%

Thermophysical properties of SnO₂-based transparent conductive films: Effect of dopant species and structure compared with In₂O₃-, ZnO-, and TiO₂-based films

et al. 2014

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High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn–Ta metal-sintered target

Cited by 40 publications

References 25 publications

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (¹¹¹In → )¹¹¹Cd-Doped SnO₂ Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon

Thermophysical properties of SnO₂-based transparent conductive films: Effect of dopant species and structure compared with In₂O₃-, ZnO-, and TiO₂-based films

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High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn–Ta metal-sintered target

Cited by 40 publications

References 25 publications

Comparative study of sputter‐deposited SnO2 films doped with antimony or tantalum

Comparative study of sputter‐deposited SnO2 films doped with antimony or tantalum

Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (111In → )111Cd-Doped SnO2 Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon

Thermophysical properties of SnO2-based transparent conductive films: Effect of dopant species and structure compared with In2O3-, ZnO-, and TiO2-based films

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Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (¹¹¹In → )¹¹¹Cd-Doped SnO₂ Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon

Thermophysical properties of SnO₂-based transparent conductive films: Effect of dopant species and structure compared with In₂O₃-, ZnO-, and TiO₂-based films