High quantum efficiency red-emission tungstate based phosphor Sr(La1−xEux)2Mg2W2O12 for WLEDs application

“…The value is found to be about 14.30%. It is higher than that of the commercial red-emitting Y 2 O 3 :Eu 3+ (12.2%) [38]. Thus, the GdBO 3 :0.25Eu 3+ phosphor has Fig.…”

Section: Photoluminescence Propertiesmentioning

confidence: 76%

Controlled synthesis of different multilayer architectures of GdBO3:Eu3+ phosphors and shape-dependent luminescence properties

Leng

Zhang

Liu

et al. 2015

Applied Surface Science

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“…This fact indicates that the energy absorbed by the CTB is transferred to Eu 3+ ions levels nonradiatively and the non-radiative losses compared to radiative emission is relatively high in this phosphor under CT excitation. The quantum efficiency of Bi 4 Si 3 O 12 : Eu 3+ phosphor under excitation at 394 nm is 14.5%, which is higher than that of commercial red phosphor Y 2 O 3 : Eu 3+ (9.6%, 394 nm excitation)64, Y 2 O 2 S: Eu 3+ (4.2%, 395 nm excitation)65. However, the quantum efficiency of Bi 4 Si 3 O 12 : Eu 3+ is lower than that of the red-emitting nitride phosphor Sr 2 Si 5 N 8 : Eu 2+ (75–80%, 465 nm excitation)66.…”

Section: Resultsmentioning

confidence: 76%

Eu3+-doped Bi4Si3O12 red phosphor for solid state lighting: microwave synthesis, characterization, photoluminescence properties and thermal quenching mechanisms

Zhang

Cui

et al. 2017

Sci Rep

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Europium-doped bismuth silicate (Bi4Si3O12) phosphor has been prepared by microwave irradiation method and its crystal structure is determined using Rietveld method. As-prepared phosphor consists of spherical, monodispersed particles with few agglomeration, high crystallinity, and narrow grain size distribution. The phosphor can be efficiently excited in the wavelength range of 260–400 nm, which matched well with the emission wavelengths of NUV LED chips. The photoluminescence spectra exhibit the highest emission peak at 703 nm originating from 5D0 → 7F4 transition of Eu3+ under NUV excitation. The luminescence lifetime for Bi4Si3O12: 2 at% Eu3+ phosphor decreases from 2.11 to 1.86 ms with increasing temperature from 10 to 498 K. This behavior of decays is discussed in terms of radiative and nonradiative decays dependence on temperature. The thermal quenching mechanism of 5D0 emission of Eu3+ in Bi4Si3O12 phosphor is a crossover process from the 5D0 level of Eu3+ to a ligand-to-europium (O2− → Eu3+) charge transfer state. The quantum efficiency of the phosphor under 393 nm excitation is found to be 14.5%, which is higher than that of the commercial red phosphors Y2O3: Eu3+, Y2O2S: Eu3+. The temperature effect on CIE coordinate was discussed in order to further investigate the potential applications.

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High quantum efficiency red-emission tungstate based phosphor Sr(La1−xEux)2Mg2W2O12 for WLEDs application

Cited by 82 publications

References 25 publications

Synthesis and luminescent properties of ellipsoid-like YBO3:Ln3+ (Ln=Eu, Tb)

Synthesis and luminescent properties of ellipsoid-like YBO3:Ln3+ (Ln=Eu, Tb)

Controlled synthesis of different multilayer architectures of GdBO3:Eu3+ phosphors and shape-dependent luminescence properties

Eu3+-doped Bi4Si3O12 red phosphor for solid state lighting: microwave synthesis, characterization, photoluminescence properties and thermal quenching mechanisms

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