High-Quality ZrO
                    <sub>2</sub>
                    Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

Zhang, Ninglin; Wan, Qing; Zhang, Song; Qin-Wo, Shen; Zhu, Xiangrong; Chenglu, Lin

doi:10.1088/0256-307x/19/3/333

Cited by 8 publications

(4 citation statements)

References 12 publications

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“…From the point of view of application, ZrO 2 thin film should be non-porous and homogeneous. The e-beam deposited ZrO 2 thin films have a relatively higher density and uniformity compared to the chemical vapor deposition technique (CVD) [13]. In this study, we have investigated the effect of the substrate temperature on the structural, surface morphological, compositional, and optical properties of ebeam evaporated ZrO 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

The Influence Of Substrate Temperature On The Structure, Morphology, And Optical Properties Of ZrO2 thin Films Prepared By E-beam Evaporation

Patel¹,

Desai²,

Panchal³

2012

Adv. Mater. Lett.

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Zirconium dioxide thin films were prepared by e-beam evaporation method to study the effect of substrate temperature on the structural, surface morphology, compositional, and optical properties. X-ray diffraction measurement shows that the films grown at 400 ℃ substrate temperature have monoclinic crystal structure. The root mean square surface roughness of the film increases with increase in the substrate temperature. The optical transmittance spectra indicate an average 80% transmittance in the visible region of light. The optical energy band gap of ZrO 2 thin film decreases from 5.68 to 5.63 eV as the substrate temperature increases from room temperature to 400 ℃, respectively.

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Section: Introductionmentioning

confidence: 99%

The Influence Of Substrate Temperature On The Structure, Morphology, And Optical Properties Of ZrO2 thin Films Prepared By E-beam Evaporation

Patel¹,

Desai²,

Panchal³

2012

Adv. Mater. Lett.

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“…ZrO2 thin films prepared by chemical vapor deposition, 24,25 pulsed laser deposition, 26,27 sol-gel processing, 28,29 electron beam evaporation, 30,31 and sputtering, 32,33 have been reported. It is known that film structure and film properties are influenced by both deposition process and deposition parameters.…”

Section: Introductionmentioning

confidence: 99%

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

Ribera

Kruijs

Sturm

et al. 2017

Journal of Applied Physics

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The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (∼1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (∼3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

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“…ZrO2 thin films have been prepared by several techniques, such as CVD 19,186,187 PLD, 188 sol-gel, 189,190 e-beam evaporation, 191 or sputtering. 192,193,194,195 As mentioned in Sec.…”

Section: Metal-oxide Thin Films: Zro2 Casementioning

confidence: 99%

“…ZrO2 thin films prepared by chemical vapor deposition, 186,187 pulsed laser deposition, 188,354 sol-gel processing, 355,356 electron beam evaporation, 191,357 and sputtering, 157,195 have been reported. It is known that film structure and film properties are influenced by both deposition process and deposition parameters.…”

Section: Introductionmentioning

confidence: 99%

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

Ribera¹

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High-Quality ZrO ₂ Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

Cited by 8 publications

References 12 publications

The Influence Of Substrate Temperature On The Structure, Morphology, And Optical Properties Of ZrO2 thin Films Prepared By E-beam Evaporation

The Influence Of Substrate Temperature On The Structure, Morphology, And Optical Properties Of ZrO2 thin Films Prepared By E-beam Evaporation

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

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High-Quality ZrO 2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

Cited by 8 publications

References 12 publications

The Influence Of Substrate Temperature On The Structure, Morphology, And Optical Properties Of ZrO2 thin Films Prepared By E-beam Evaporation

The Influence Of Substrate Temperature On The Structure, Morphology, And Optical Properties Of ZrO2 thin Films Prepared By E-beam Evaporation

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

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Product

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High-Quality ZrO ₂ Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation